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AT25QF641-MHB-T

Description
NOR flash QPI,8-UDFN (5x6x0.6), IND TEMP, 3V, T&R
Categorysemiconductor    Memory IC    NOR flash memory   
File Size5MB,75 Pages
ManufacturerAdesto Technologies
Environmental Compliance
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AT25QF641-MHB-T Overview

NOR flash QPI,8-UDFN (5x6x0.6), IND TEMP, 3V, T&R

AT25QF641-MHB-T Parametric

Parameter NameAttribute value
MakerAdesto Technologies
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxUDFN-8
seriesAT25QF641
storage64 Mbit
maximum clock frequency104 MHz
Interface TypeQPI, SPI
Timing typeSynchronous
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Supply current—max.25 mA
Minimum operating temperature- 40 C
EncapsulationReel
storage typeFlash
speed104 MHz
Factory packaging quantity6000
unit weight8.500 mg
AT25QF641
64-Mbit, 2.7V Minimum
SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
Features
Single 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual Output Read and Quad I/O Program and Read
Supports QPI Program and Read
104 MHz* Maximum Operating Frequency
Clock-to-Output (t
V1
) of 6 ns
Up tp 52MB/S continuous data transfer rate
Quad Enabled (factory default setting: see Section 6-7)
Full Chip Erase
Flexible, Optimized Erase Architecture for Code and Data Storage Applications
0.6 ms Typical Page Program (256 Bytes) Time
60 ms Typical 4-Kbyte Block Erase Time
350 ms Typical 32-Kbyte Block Erase Time
700 ms Typical 64-Kbyte Block Erase Time
Hardware Controlled Locking of Protected Blocks via WP Pin
4K-bit secured One-Time Programmable Security Register
Software and Hardware Write Protection
Serial Flash Discoverable Parameters (SFDP) Register
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Dual or Quad Input Byte/Page Program (1 to 256 Bytes)
Erase/Program Suspend and Resume
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
2µA Deep Power-Down Current (Typical)
10µA Standby current (Typical)
5mA Active Read Current (Typical)
Endurance: 100,000 program/erase cycles (4KB, 32KB or 64KB blocks)
Data Retention: 20 Years
Industrial Temperature Range: -40°C to +85°C
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (208-mil)
8-pad DFN (6 x 5 x 0.6 mm)
Die in Wafer Form
DS-25QF641–127E–3/2018

AT25QF641-MHB-T Related Products

AT25QF641-MHB-T AT25QF641-DWF AT25QF641-UCUB-T
Description NOR flash QPI,8-UDFN (5x6x0.6), IND TEMP, 3V, T&R NOR flash QPI,Die in Wafer Form NOR Flash QPI,18- WLCSP, IND TEMP, 3V, T&R
Maker Adesto Technologies Adesto Technologies Adesto Technologies
Product Category NOR flash memory NOR flash memory NOR flash memory
Installation style SMD/SMT SMD/SMT SMD/SMT
Package/box UDFN-8 Die WLCSP-18
series AT25QF641 AT25QF641 AT25QF641
storage 64 Mbit 64 Mbit 64 Mbit
maximum clock frequency 104 MHz 104 MHz 104 MHz
Interface Type QPI, SPI QPI, SPI QPI, SPI
Timing type Synchronous Synchronous Synchronous
Supply voltage - min. 2.7 V 2.7 V 2.7 V
Supply voltage - max. 3.6 V 3.6 V 3.6 V
Supply current—max. 25 mA 25 mA 25 mA
Minimum operating temperature - 40 C - 40 C - 40 C
storage type Flash Flash Flash
speed 104 MHz 104 MHz 104 MHz
Factory packaging quantity 6000 1 5000
Encapsulation Reel - Reel
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