RoHS Compliant
8GB ECC DDR4 SDRAM UDIMM
Anti-Sulfuration / Halogen free
Product Specifications
May 18, 2017
Version 0.3
Apacer Technology Inc.
1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan
Tel: +886-2-2267-8000
www.apacer.com
Fax: +886-2-2267-2261
Table of Contents
General Description ....................................................................................................... 2
Ordering Information ..................................................................................................... 2
Key Parameters .............................................................................................................. 2
Specifications: ................................................................................................................ 3
Features: ......................................................................................................................... 4
Anti-Sulfuration Application ......................................................................................... 5
Pin Assignments ............................................................................................................. 6
Pin Descriptions ............................................................................................................. 8
Functional Block Diagram ............................................................................................. 9
Absolute Maximum Ratings ........................................................................................ 10
DRAM Component Operating Temperature Range..................................................... 11
Operating Conditions ................................................................................................... 12
Environmental Requirements....................................................................................... 13
IDD Specifications ....................................................................................................... 14
Mechanical Drawing .................................................................................................... 17
©Apacer Technology Inc.
1
General Description
Apacer
75.C93H7.G000B
is a 1024M x 72 DDR4 SDRAM (Synchronous
DRAM) ECC DIMM. This high-density memory module consists of 18 pieces
512M x 8 bits with 4 banks DDR4 synchronous DRAMs in FBGA packages
and a 4K Bits EEPROM. The module is a 288-pins dual in-line memory module
and is intended for mounting into a connector socket. The following provides
general specifications of this module.
Ordering Information
Part Number
75.C93H7.G000B
Bandwidth
19.2 GB/sec
Speed Grade
2400 Mbps
Max Frequency
1200 MHz
CAS Latency
CL17
Density
8GB
Organization
1024M x 72
Component
512M x8*18
Rank
2
Key Parameters
MT/s
Grade
DDR4-1866
-CL13
1.07
13
13.92
13.92
34
47.92
13-13-13
DDR4-2133
-CL15
0.93
15
14.06
14.06
33
47.05
15-15-15
DDR4-2400
-CL17
0.83
17
14.16
14.16
32
46.16
17-17-17
Unit
ns
tCK
ns
ns
ns
ns
tCK
tCK (min)
CAS latency
tRCD (min)
tRP (min)
tRAS (min)
tRC (min)
CL-tRCD-tRP
©Apacer Technology Inc.
2
Specifications:
Support ECC error detection and correction
On-DIMM thermal sensor : Yes
Organization: 1024 words x 72 bits, 2 ranks
Integrating 18 pieces of 4G bits DDR4 SDRAM sealed FBGA
Package: 288-pin socket type dual in-line memory module (ECC DIMM)
PCB: height 31.25 mm, lead pitch 0.85 mm (pin),
Serial Presence Detect (SPD)
Power Supply: VDD=1.2V (1.14V to 1.26V)
VDDQ = 1.2V (1.14V to 1.26V)
VPP = 2.5V (2.375V to 2.75V)
VDDSPD = 2.2V to 3.6V
16 internal banks (4 Bank Groups)
CAS Latency (CL): 13, 14, 15, 16, 17
CAS Write Latency (CWL): 12,16
Average refresh period
7.8us at 0°C
≦
TC
≦
85°C
3.9us at 85°C
≦
TC
≦
95°C
Lead-free (RoHS compliant)
Halogen free
PCB: 30µ gold finger
Anti-Sulfuration
©Apacer Technology Inc.
3
Features:
♦
Functionality and operations comply with the DDR4 SDRAM datasheet
Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or dif-ferent bank group accesses are available
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
DBI (Data Bus Inversion) is supported(x8)
CA parity (Command/Address Parity) mode is supported
Anti-FOS test: ASTM-B809-95
©Apacer Technology Inc.
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