3KASMC22AHM3_B/I datasheet, PDF

3KASMC10A thru 3KASMC43A

www.vishay.com

Vishay General Semiconductor

Surface Mount

PAR

®

Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

• T

J

= 185 °C capability suitable for high

reliability and automotive requirement

• Available in uni-directional polarity only

Available

• 3000 W peak pulse power capability with a 10/1000 μs

waveform

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

SMC (DO-214AB)

PRIMARY CHARACTERISTICS

V

WM

V

BR

P

PPM

P

D

I

FSM

T

J

max.

Polarity

Package

10 V to 43 V

11.1 V to 52.8 V

3000 W

6.0 W

200 A

185 °C

Uni-directional

SMC (DO-214AB)

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

MECHANICAL DATA

Case:

SMC (DO-214AB)

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified



(“X” denotes revision code e.g. A, B, ...)

Terminals:

matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 and HM3 suffix meet JESD 201 class 2 whisker test

Polarity:

color band denotes cathode end

MAXIMUM RATINGS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation with a 10/1000 μs waveform

(1)

(fig. 3)

Peak power pulse current with a 10/1000 μs waveform

(1)

(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

(2)

Power dissipation

on infinite heatsink, T

L

= 75 °C

(fig. 6)

Maximum instantaneous forward

voltage

at 100 A

(2)

Operating junction and storage temperature range

SYMBOL

P

PPM

I

PPM

I

FSM

P

D

V

F

T

J

, T

STG

VALUE

3000

See next table

200

6.0

3.5

-65 to +185

UNIT

W

A

W

V

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.

A

(2)

Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

Revision: 17-Aug-17

Document Number: 88480

1

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

3KASMC10A thru 3KASMC43A

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

DEVICE TYPE

DEVICE

MARKING

CODE

BREAKDOWN

VOLTAGE

V

BR

AT I

T (1)

(V)

MIN.

3KASMC10A

3KASMC11A

3KASMC12A

3KASMC13A

3KASMC14A

3KASMC15A

3KASMC16A

3KASMC17A

3KASMC18A

3KASMC20A

3KASMC22A

3KASMC24A

3KASMC26A

3KASMC28A

3KASMC30A

3KASMC33A

3KASMC36A

3KASMC40A

3KASMC43A

3AX

3AZ

3BE

3BG

3BK

3BM

3BP

3BR

3BT

3BV

3BX

3BZ

3CE

3CG

3CK

3CM

3CP

3CR

3CT

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

36.7

40.0

44.4

47.8

MAX.

12.3

13.5

14.7

15.9

17.2

18.5

19.7

20.9

22.1

24.5

26.9

29.5

31.9

34.4

36.8

40.6

44.2

49.1

52.8

TEST

STAND-OFF

CURRENT VOLTAGE

I

T

V

WM

(mA)

(V)

1.0

10

11

12

13

14

15

16

17

18

20

22

24

26

28

30

33

36

40

43

MAXIMUM

REVERSE

LEAKAGE

AT V

WM

I

R

(μA)

5.0

2.0

1.0

MAXIMUM

REVERSE

LEAKAGE

AT V

WM

I

D

(μA)

T

J

= 150 °C

50

20

10

15

20

MAXIMUM

PEAK PULSE CLAMPING

SURGE

VOLTAGE AT

CURRENT

I

PPM

(2)

I

PPM

(A)

V

C

(V)

177

165

151

140

129

123

115

109

103

92.6

84.5

77.1

71.3

66.1

62.0

56.3

51.6

46.5

43.2

17.0

18.2

19.9

21.5

23.2

24.4

26.0

27.6

29.2

32.4

35.5

38.9

42.1

45.4

48.4

53.3

58.1

64.5

69.4

Notes

(1)

Pulse test: t



50 ms

p

(2)

Surge current waveform per fig. 3 and derate per fig. 2

(3)

All terms and symbols are consistent with ANSI/IEEE C62.35

THERMAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Typical thermal resistance, junction to ambient air

(1)

Typical thermal resistance, junction to leads

(1)

SYMBOL

R

JA

R

JL

VALUE

77.5

18.3

UNIT

°C/ W

Note

Mounted on minimum recommended pad layout

ORDERING INFORMATION

(Example)

PREFERRED P/N

3KASMC10AHE3_B/H

(1)

3KASMC10AHE3_B/I

(1)

3KASMC10AHM3_B/H

(1)

3KASMC10AHM3_B/I

(1)

UNIT WEIGHT (g)

0.211

PREFERRED PACKAGE CODE

H

I

H

I

BASE QUANTITY

850

3500

850

3500

DELIVERY MODE

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

Note

AEC-Q101 qualified

Revision: 17-Aug-17

Document Number: 88480

2

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

3KASMC10A thru 3KASMC43A

www.vishay.com

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T

A

= 25 °C unless otherwise noted)

100

10 000

10

C

J

- Junction Capacitance (pF)

Measured at

Zero Bias

P

PPM

- Peak Power (kW)

1000

Measured at

Stand-Off Voltage

T

J

= 25 °C

f = 1.0 MHz

V

sig

= 50 mVp-p

100

10

20

30

40

50

1

0.1

1

10

100

1000

10 000

t

d

- Pulse

Width

(µs)

V

WM

- Reverse Stand-off Voltage (V)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 4 -

Typical Junction Capacitance

Peak Pulse Power (P

PP

) or Current (I

PP

)

Derating in Percentage, %

100

200

Peak Forward Surge Current (A)

T

J

= T

J

max.

8.3 ms Single Half Sine-Wave

100

75

50

25

0

50

100

150

200

10

1

5

10

50

100

T

J

- Initial Temperature (°C)

Number

of Cycles at 60 Hz

Fig. 2 -

Pulse Power or Current

vs.

Initial Junction Temperature

Fig. 5 -

Maximum Non-Repetitive/Peak Forward Surge Current

150

I

PPM

- Peak Pulse Current, % I

RSM

t

r

= 10 µs

Peak Value

I

PPM

100

P

D

- Power Dissipation (W)

T

J

= 25 °C

Pulse

Width

(t

d

)

is defined as the Point

where

the Peak Current

decays to 50 % of I

PPM

6

5

60 Hz

Resistive or

Inductive Load

4

3

2

1

0

Half Value - I

PP

I

PPM

2

50

10/1000 µs

Waveform

as defined

by

R.E.A.

t

d

0

1.0

2.0

3.0

4.0

0

25

50

75

100

125

150

175

200

t - Time (ms)

T

L

- Lead Temperature (°C)

Fig. 3 -

Pulse Waveform

Fig. 6 - Power Derating Curve

Revision: 17-Aug-17

Document Number: 88480

3

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

3KASMC10A thru 3KASMC43A

www.vishay.com

PACKAGE OUTLINE DIMENSIONS

in inches (millimeters)

SMC

(DO-214AB)

Cathode Band

Mounting Pad Layout

0.185 (4.69) MAX.

0.126 (3.20)

0.114 (2.90)

0.246 (6.22)

0.220 (5.59)

0.126 (3.20) MIN.

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.103 (2.62)

0.079 (2.06)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

Vishay General Semiconductor

0.060 (1.52) MIN.

0.320 (8.13) REF.

Revision: 17-Aug-17

Document Number: 88480

4

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

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Revision: 08-Feb-17

1

Document Number: 91000

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
ECCN code	EAR99
Factory Lead Time	12 weeks
Other features	HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	26.9 V
Minimum breakdown voltage	24.4 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	185 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	6 W
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	22 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Base Number Matches	1

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