BLF7G21L-160,118 datasheet, PDF

Datasheet> All Categories > semiconductor> Discrete semiconductor> The transistor> The RF transistor> Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET)> BLF7G21L-160,118

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BLF7G21L-160,118: DescriptionRadio frequency metal oxide semiconductor field effect (RF MOSFET) transistor BLF7G21L-160/ACC-4L/REEL13//; Categorysemiconductor Discrete semiconductor The transistor The RF transistor Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET); File Size160KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLF7G21L-160,118 Overview

Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor BLF7G21L-160/ACC-4L/REEL13//

BLF7G21L-160,118 Parametric

Parameter Name	Attribute value
Maker	NXP
Product Category	Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Transistor polarity	N-Channel
technology	Si
Id-continuous drain current	32.5 A
Vds - drain-source breakdown voltage	65 V
Gain	18 dB
Output Power	50 W
Maximum operating temperature	+ 150 C
Installation style	SMD/SMT
Package/box	SOT-1121A
Configuration	Dual
working frequency	1.8 GHz to 2.05 GHz
type	RF Power MOSFET
Vgs - gate-source voltage	13 V
Vgs th-gate-source threshold voltage	1.9 V

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BLF7G21L-160P;

BLF7G21LS-160P

Power LDMOS transistor

Rev. 2 — 13 October 2011

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2050 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

1-carrier W-CDMA

[1]

[2]

(MHz)

1930 to 1990

(mA)

1080

(V)

L(AV)

(W)

(dB)

18.0



(%)

ACPR

(dBc)

30

[1]

34

[2]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits



Excellent ruggedness

High efficiency

Low R

providing excellent thermal stability

Designed for broadband operation (1800 MHz to 2050 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to

2050 MHz frequency range

BLF7G21L-160,118 Related Products

	BLF7G21L-160,118	BLF7G21L-160,112
Description	Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor BLF7G21L-160/ACC-4L/REEL13//	RF MOSFET Transistors BLF7G21L-160/ACC-4L/TUBE-BULK/
Product Category	Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor	RF MOSFET Transistors
Gain	18 dB	18 dB
Output Power	50 W	50 W
Configuration	Dual	Dual

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