DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPS3906
PNP switching transistor
Product specification
Supersedes data of 1999 Apr 12
2004 Oct 27
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: MPS3904.
1
handbook, halfpage
MPS3906
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
2
3
1
2
3
MAM280
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
MPS3906
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−40
−40
−5
−100
−200
−200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Oct 27
2
Philips Semiconductors
Product specification
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−30
V; I
E
= 0 A
V
EB
=
−5
V; I
E
= 0 A
V
CE
=
−1
V; note 1
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
I
C
=
−100
mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
V
CB
=
−5
V; I
E
= i
e
= 0 A;
f = 100 kHz to 1 MHz
V
EB
=
−0.5
V; I
C
= i
c
= 0 A;
f = 100 kHz to 1 MHz
V
CE
=
−20
V; I
C
=
−10
mA; f = 100 MHz
V
CE
=
−5
V; I
C
=
−100 µA;
R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
I
Bon
=
−10
mA; I
Bon
=
−1
mA;
I
Boff
= 1 mA; V
CC
=
−3
V; V
BB
= 1.9 V
60
80
100
60
30
−
−
−650
−
−
−
150
−
MIN.
−
−
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
MPS3906
VALUE
250
UNIT
K/W
MAX.
−50
−50
−
−
300
−
−
−250
−400
−850
−950
5
15
−
4
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10 % and 90 % levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
−
−
−
−
−
−
100
50
50
700
600
100
ns
ns
ns
ns
ns
ns
2004 Oct 27
3
Philips Semiconductors
Product specification
PNP switching transistor
MPS3906
V
BB
V
CC
R
B
oscilloscope
V
I
R1
(probe)
450
Ω
R2
R
C
V
o
(probe)
450
Ω
DUT
oscilloscope
mgd624
V
i
=
−5
V; t
p
≥
4
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
2004 Oct 27
4
Philips Semiconductors
Product specification
PNP switching transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
MPS3906
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
2004 Oct 27
5
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