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S34MS04G204TFB013

Description
NAND flash memoryNand
Categorysemiconductor    Memory IC    NAND flash memory   
File Size2MB,75 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S34MS04G204TFB013 Overview

NAND flash memoryNand

S34MS04G204TFB013 Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryNAND flash memory
Installation styleSMD/SMT
Package/boxTSOP-48
seriesS34MS04G2
storage4 Gbit
Interface TypeParallel
organize256 M x 16
Timing typeAsynchronous
Data bus width16 bit
Supply voltage - min.1.7 V
Supply voltage - max.1.95 V
Supply current—max.30 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 105 C
EncapsulationReel
storage typeNAND
productNAND Flash
Factory packaging quantity1000
S34MS01G2
S34MS02G2
S34MS04G2
1 Gbit/2 Gbit/4 Gbit
SLC NAND Flash for Embedded
Distinctive Characteristics
Density
– 1 Gb / 2 Gb / 4 Gb
Architecture
– Input / Output Bus Width: 8 bits / 16 bits
– Page size:
– x8
1 Gb: (2048 + 64) bytes; 64-byte spare area
2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area
– x16
1 Gb: (1024 + 32) words; 32-word spare area
2 Gb / 4Gb: (1024 + 64) words; 64-word spare area
– Block size: 64 Pages
– x8
1 Gb: 128 KB + 4 KB
2 Gb / 4 Gb: 128 KB + 8 KB
– x16
1 Gb: (64k + 2k) words
2 Gb / 4 Gb: (64k + 4k) words
– Plane size:
– x8
1 Gb: 1024 Blocks per Plane or (128 MB + 4 MB)
2 Gb: 1024 Blocks per Plane or (128 MB + 8 MB)
4 Gb: 2048 Blocks per Plane or (256 MB + 16 MB)
– x16
1 Gb: 1024 Blocks per Plane or (64M + 2M) words
2 Gb: 1024 blocks per plane or (64M + 4M) words
4 Gb: 2048 blocks per plane or (128M + 8M) words
– Device size:
– 1 Gb: 1 plane per device or 128 MB
– 2 Gb: 2 planes per device or 256 MB
– 4 Gb: 2 planes per device or 512 MB
NAND flash interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data, and Commands multiplexed
Supply voltage
– 1.8 V device: V
CC
= 1.7 V ~ 1.95 V
Security
– One Time Programmable (OTP) area
– Serial number (unique ID) (Contact factory for support)
– Hardware program/erase disabled during power transition
Additional features
– 2 Gb and 4 Gb parts support Multiplane Program and
Erase commands
– Supports Copy Back Program
– 2 Gb and 4 Gb parts support Multiplane Copy Back
Program
– Supports Read Cache
Electronic signature
– Manufacturer ID: 01h
Operating temperature
– Industrial:
40 °C to 85 °C
– Industrial Plus:
40 °C to 105 °C
Performance
Page Read / Program
– Random access: 25 µs (Max) (S34MS01G2)
– Random access: 30 µs (Max) (S34MS02G2,
S34ML04G2)
– Sequential access: 45 ns (Min)
– Program time / Multiplane Program time: 300 µs (Typ)
Block Erase (S34MS01G2)
– Block Erase time: 3.0 ms (Typ)
Block Erase / Multiplane Erase (S34MS02G2, S34MS04G2)
– Block Erase time: 3.5 ms (Typ)
Reliability
– 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes (x8) or 264 words (x16))
– 10-year Data retention (Typ)
– For one plane structure (1-Gb density)
– Block zero is valid and will be valid for at least 1,000
program-erase cycles with ECC
– For two plane structures (2-Gb and 4-Gb densities)
– Blocks zero and one are valid and will be valid for at
least 1,000 program-erase cycles with ECC
Package options
– Pb-free and Low Halogen
– 48-Pin TSOP 12
20
1.2 mm
– 63-Ball BGA 9
11
1 mm
– 67-Ball BGA 8
6.5
1 mm
(S34MS01G2, S34MS02G2)
Cypress Semiconductor Corporation
Document Number: 002-03238 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 09, 2017
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