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VSIB10A20-E3/45

Description
Bridge Rectifier 200 Volt 10 Amp 180 Amp IFSM
CategoryDiscrete semiconductor    diode   
File Size94KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VSIB10A20-E3/45 Overview

Bridge Rectifier 200 Volt 10 Amp 180 Amp IFSM

VSIB10A20-E3/45 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee3
Maximum non-repetitive peak forward current180 A
Number of components4
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Not Available for New Designs, Use GSIB15A20, GSIB15A40, GSIB15A60, GSIB15A80
VSIB10A20, VSIB10A40, VSIB10A60, VSIB10A80
www.vishay.com
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 260 °C, 40 s
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
~
~
TYPICAL APPLICATIONS
~
~
Case Style GSIB-5S
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 5.0 A
T
J
max.
Diode variations
GSIB-5S
10 A
200 V, 400 V, 600 V, 800 V
180 A
10 μA
1.0 V
150 °C
In-Line
Case:
GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output
current at T
C
= 110 °C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Note
(1)
Unit case mounted on aluminum plate heatsink
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
VSIB10A20
200
140
200
VSIB10A40
400
280
400
10
(1)
180
130
- 55 to + 150
VSIB10A60
600
420
600
VSIB10A80
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
drop per diode
Maximum DC reverse current at rated DC
blocking voltage per diode
TEST CONDITIONS SYMBOL
5.0 A
T
A
= 25 °C
T
A
= 125 °C
V
F
I
R
VSIB10A20
VSIB10A40
VSIB10A60
VSIB10A80
UNIT
V
μA
1.00
10
250
Revision: 26-Jun-13
Document Number: 84651
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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