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PCF8582C-2T/03,112

Description
Electrically erasable programmable read-only memory Electrically erasable programmable read-only memory 256X8 W/I2C 100KHZ -40+85
Categorystorage    storage   
File Size109KB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PCF8582C-2T/03,112 Overview

Electrically erasable programmable read-only memory Electrically erasable programmable read-only memory 256X8 W/I2C 100KHZ -40+85

PCF8582C-2T/03,112 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Parts packaging codeSOIC
package instructionSOP, SOP8,.25
Contacts8
Manufacturer packaging codeSOT96-1
Reach Compliance Codecompliant
Maximum clock frequency (fCLK)0.1 MHz
Data retention time - minimum10
Durability1000000 Write/Erase Cycles
I2C control byte1010DDDR
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.9 mm
memory density2048 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256X8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply3/5 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeI2C
Maximum standby current0.0000035 A
Maximum slew rate0.002 mA
Maximum supply voltage (Vsup)6 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width3.9 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1
PCF8582C-2
256
×
8-bit CMOS EEPROM with I
2
C-bus interface
Rev. 04 — 25 October 2004
Product data
1. Description
The PCF8582C-2 is a floating gate Electrically Erasable Programmable Read Only
Memory (EEPROM) with 2 kbits (256
×
8-bit) non-volatile storage. By using an
internal redundant storage code, it is fault tolerant to single bit errors. This feature
dramatically increases the reliability compared to conventional EEPROMs. Power
consumption is low due to the full CMOS technology used. The programming voltage
is generated on-chip, using a voltage multiplier.
Data bytes are received and transmitted via the serial I
2
C-bus. Up to eight
PCF8582C-2 devices may be connected to the I
2
C-bus. Chip select is accomplished
by three address inputs (A0, A1 and A2).
Timing of the E/W cycle is carried out internally, thus no external components are
required. Programming Time Control (PTC), Pin 7, must be connected to either V
DD
or left open-circuit. There is an option of using an external clock for timing the length
of an E/W cycle.
2. Features
s
Low power CMOS:
x
2.0 mA maximum operating current
x
maximum standby current 10
µA
(at 6.0 V), typical 4
µA
s
Non-volatile storage of 2 kbits organized as 256
×
8-bit
s
Single supply with full operation down to 2.5 V
s
On-chip voltage multiplier
s
Serial input/output I
2
C-bus
s
Write operations:
x
byte write mode
x
8-byte page write mode (minimizes total write time per byte)
s
Read operations:
x
sequential read
x
random read
s
Internal timer for writing (no external components)
s
Internal power-on reset
s
0 kHz to 100 kHz clock frequency
s
High reliability by using a redundant storage code
s
Endurance: 1,000,000 Erase/Write (E/W) cycles at T
amb
= 22
°C
s
10 years non-volatile data retention time

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Description Electrically erasable programmable read-only memory Electrically erasable programmable read-only memory 256X8 W/I2C 100KHZ -40+85 EEPROM 256X8 EEPROM I2C BUS SO-8

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