BTA312-800E
3Q Hi-Com Triac
19 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package.
This "series E" triac balances the requirements of commutation performance and gate sensitivity.
The "sensitive gate" "series E" is intended for interfacing with low power drivers including
microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
2
2
Typ
-
-
-
-
-
-
-
Max
800
12
100
110
125
10
10
Unit
V
A
A
A
°C
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA312-800E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
-
-
50
Typ
-
-
1.3
-
Max
10
15
1.6
-
Unit
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 15 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 10 V/µs; gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 1 V/µs; gate open circuit
Dynamic characteristics
dI
com
/dt
3
-
-
A/ms
6
10
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
BTA312-800E
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BTA312-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
2 / 13
WeEn Semiconductors
BTA312-800E
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
15
I
T(RMS )
(A)
003a a b686
Conditions
Min
-
Max
800
12
100
110
50
100
2
5
0.5
150
125
003a a b687
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
50
I
T(RMS )
(A)
40
10
30
5
20
10
0
-50
0
50
100
150
T
mb
(°C)
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 100 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA312-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
3 / 13
WeEn Semiconductors
BTA312-800E
3Q Hi-Com Triac
20
P
tot
(W)
16
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
003aab690
95
α
α = 180 °
120°
T
mb (max)
(°C)
101
12
α
90 °
60°
30°
107
8
113
4
119
0
0
3
6
9
I
T(RMS)
(A)
125
12
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
4 / 13
WeEn Semiconductors
BTA312-800E
3Q Hi-Com Triac
120
I
TSM
(A)
100
80
60
40
20
0
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA312-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
5 / 13
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