The DG201B, DG202B analog switches are highly improved
versions of the industry-standard DG201A, DG202. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG201B and DG202B
can handle up to ± 22 V input signals, and have an improved
continuous current rating of 30 mA. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in the
off condition.
The DG201B is a normally closed switch and the DG202B is
a normally open switch. (see Truth Table.)
FEATURES
•
•
•
•
•
•
•
•
•
± 22 V supply voltage rating
TTL and CMOS compatible logic
Low on-resistance - R
DS(on)
: 45
Low leakage - I
D(on)
: 20 pA
Single supply operation possible
Extended temperature range
Fast switching - t
ON
: 120 ns
Low glitching - Q: 1 pC
Compliant to RoHS Directive 2002/95/EC
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
•
Wide analog signal range
•
•
•
•
•
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG201A, DG202
•
Space savings (TSSOP)
APPLICATIONS
•
Industrial instrumentation
•
•
•
•
•
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
•
Sample-and-hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG201B
Dual-In-Line, SOIC and TSSOP
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
IN
2
D
2
S
2
V+
NC
S
3
D
3
IN
3
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
TRUTH TABLE
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
DG201B
ON
OFF
DG202B
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG201B, DG202B
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
- 55 °C to 125 °C
Package
16-pin CerDIP
Part Number
DG201BAK
DG202BAK
DG201BDJ
DG201BDJ-E3
DG202BDJ
DG202BDJ-E3
DG201BDY
DG201BDY-E3
DG201BDY-T1
DG201BDY-T1-E3
16-pin narrow SOIC
- 40 °C to 85 °C
DG202BDY
DG202BDY-E3
DG202BDY-T1
DG202BDY-T1-E3
DG201BDQ
DG201BDQ-E3
DG201BDQ-T1
DG201BDQ-T1-E3
16-pin TSSOP
DG202BDQ
DG202BDQ-E3
DG202BDQ-T1
DG202BDQ-T1-E3
16-pin Plastic DIP
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced, V+ to V-
GND
Digital
Inputs
a
,
V
S
, V
D
Limit
44
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
470
d
Unit
V
Current (Any terminal)
Peak Current S or D (Pulsed at 1 ms, 10 % duty cycle max.)
Storage Temperature
(AK, DK suffix)
(DJ, DY, DQ suffix)
16-pin plastic DIP
c
Power Dissipation (Package)
b
16-pin narrow SOIC and TSSOP
16-pin CerDIP
LCC-20
f
e
mA
°C
640
900
750
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 10 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG201B, DG202B
Vishay Siliconix
SCHEMATIC DIAGRAM
(typical channel)
V+
5V
Reg
Level
Shift/
Drive
IN
X
V-
V+
S
X
D
X
GND
V-
Figure 1.
SPECIFICATIONS
a
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
IN
= 2.4 V, 0.8 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Typ.
c
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
V
INH
or V
INL
Full
Room
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
5
120
65
1
5
5
16
90
95
dB
pF
300
200
300
200
ns
-1
Min.
d
- 15
45
2
± 0.01
± 0.01
± 0.02
Max.
d
15
85
100
0.5
20
0.5
20
0.5
40
Min.
d
- 15
Max.
d
15
85
100
0.5
5
0.5
5
0.5
10
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
R
DS(on)
Match
Source Off Leakage
Current
Drain Off Leakage
Current
Drain On Leakage
Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off Isolation
Channel-to-Channel
Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Power Supply Range for
Continuous Operation
Symbol
V
ANALOG
R
DS(on)
R
DS(on
I
S(off)
I
D(off)
I
D(on)
V
D
= ± 10 V, I
S
= 1 mA
V
S
= ± 14 V, V
D
= ± 14 V
V
D
= ± 14 V, V
S
= ± 14 V
V
S
= V
D
= ± 14 V
- 0.5
- 20
- 0.5
- 20
- 0.5
- 40
2.4
- 0.5
-5
- 0.5
-5
- 0.5
- 10
2.4
nA
V
INH
V
INL
I
INH
or I
INL
C
IN
0.8
1
-1
0.8
1
V
µA
pF
t
ON
t
OFF
Q
C
S(off)
C
D(off)
C
D(on)
OIRR
X
TALK
V
S
= 2 V
see switching time test circuit
C
L
= 1000 pF, V
g
= 0 V
R
g
= 0
V
S
= 0 V, f = 1 MHz
V
D
= V
S
= 0 V, f = 1 MHz
C
L
= 15 pF, R
L
= 50
V
S
= 1 V
RMS
, f = 100 kHz
pC
I+
V
IN
= 0 or 5 V
I-
V
OP
Room
Full
Room
Full
Full
50
100
-1
-5
± 4.5
± 22
-1
-5
± 4.5
50
100
µA
± 22
V
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG201B, DG202B
Vishay Siliconix
SPECIFICATIONS
(for Single Supply)
a
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V
IN
= 2.4 V, 0.8 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Typ.
c
Full
Room
Full
Room
Room
Room
Min.
d
0
90
Max.
d
12
160
200
300
200
Min.
d
0
Max.
d
12
160
200
300
200
Unit
V
Parameter
Symbol
Analog Switch
V
ANALOG
Analog Signal Range
e
Drain-Source
R
DS(on)
On-Resistance
Dynamic Characteristics
Turn-On Time
t
ON
Turn-Off Time
Charge Injection
Power Supply
Positive Supply Current
Negative Supply Current
Power Supply Range for
Continuous Operation
I+
t
OFF
Q
V
D
= 3 V, 8 V, I
S
= 1 mA
V
S
= 8 V
see switching time test circuit
C
L
= 1 nF, V
gen
= 6 V
R
gen
= 0
120
60
4
ns
pC
V
IN
= 0 or 5 V
I-
V
OP
Room
Full
Room
Full
Full
50
100
-1
-5
+ 4.5
+ 25
-1
-5
+ 4.5
50
100
µA
+ 25
V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG201B, DG202B
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
110
100
90
80
R
DS(on)
(Ω)
70
60
50
40
30
20
10
- 20 - 16 - 12
-8
-4
0
4
8
12
16
20
V
D
- Drain Voltage (V)
± 20 V
20
10
0
- 15
± 10 V
± 15 V
±5V
R
DS(on)
(Ω)
100
90
80
70
60
50
40
30
125 °C
85 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
R
DS(on)
vs. V
D
and Power Supply Voltages
250
225
200
175
R
DS(on)
(Ω)
7V
10 V
100
75
50
25
0
0
2
4
6
8
10
12
14
16
V
D
- Drain Voltage (V)
0
4
6
12 V
15 V
0.5
V
TH
(V)
150
125
1.5
V+ = 5 V
2
2.5
R
DS(on)
vs. V
D
and Temperature
1
8
10
12
14
16
18
20
V+ Positive Supply (V)
R
DS(on)
vs. V
D
and Single Power Supply Voltages
80
60
40
I
S,
I
D
- Current (pA)
20
0
- 20
- 40
- 60
- 80
- 20
I
S(off)
, I
D(off)
I
S
, I
D
- Current
100 pA
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
1 nA
Input Switching Threshold vs. Supply Voltage
V+ = 15 V
V- = - 15 V
V
S,
V
D
= ± 14 V
I
S(off)
, I
D(off)
10 pA
I
D(on)
- 15
- 10
-5
0
5
10
15
20
1 pA
- 55
- 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Temperature (°C)
Leakage Currents vs. Analog Voltage
Leakage Currents vs. Temperature
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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