FEP16AT - FEP16JT
PIN 1
+
CASE
PIN 2
FEP16AT - FEP16JT
Features
•
•
•
•
Low forward voltage drop.
High surge current capacity.
1
PIN 3
Positive CT
PIN 1
PIN 3
Negative CT
Suffix "A"
2
3
-
CASE
PIN 2
High current capability.
High reliability.
PIN 1
AC
CASE
PIN 2
TO-220AB
PIN 3
Doubler
Suffix "D"
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
16AT
16BT
16CT
Value
16DT
16FT
16GT
16HT
16JT
Units
400
500
600
V
A
A
°C
°C
T
stg
T
J
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 100°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
100
150
200
300
16
200
-55 to +150
-55 to +150
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
8.33
15
2.2
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
T
A
= 25°C unless otherwise noted
Parameter
16AT
16BT
Device
16CT 16DT
16FT
16GT
16HT
16JT
Units
1.5
50
V
ns
µA
µA
60
pF
C
T
Forward Voltage @ 8.0A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
Total Capacitance
V
R
= 4.0. f = 1.0 MHz
0.95
35
10
500
85
1.3
2001
Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
FEP16AT - FEP16JT
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
Peak Forward Surge Current, I
FSM
[A]
20
200
16
160
12
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
120
8
80
4
40
0
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 1. Forward Current Derating Curve
100
FEP16AT-FEP16DT
Figure 2. Non-Repetitive Surge Current
Reverse Characteristics
1000
Forward Current, I
F
[A]
Reverse Current, I
R
[mA]
10
FEP16FT-FEP16JT
100
T
A
= 100
º
C
1
10
0.1
T
A
= 25
º
C
Pulse Width = 300µs
µ
2% Duty Cycle
1
T
A
= 25
º
C
0.01
0.4
0.1
0.6
0.8
1
1.2
1.4
Forward Voltage, V
F
[V]
1.6
1.8
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
100
Total Capacitance, C
T
[pF]
90
80
70
60
50
FEP16FT-FEP16JT
40
Figure 4. Reverse Current vs Reverse Voltage
FEP16AT-FEP16DT
1
2
5
10
20
Reverse Voltage, V
R
[V]
50
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001
Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
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