BGA7027
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Rev. 2 — 26 November 2010
Product data sheet
1. Product profile
1.1 General description
The BGA7027 MMIC is a one-stage amplifier, offered in a low-cost surface-mount
package. It delivers 28 dBm output power at 1 dB gain compression and a superior
performance up to 2700 MHz.
1.2 Features and benefits
400 MHz to 2700 MHz frequency operating range
11 dB small signal gain at 2 GHz
28 dBm output power at 1 dB gain compression
Integrated active biasing
External matching allows broad application optimization of the electrical performance
5 V single supply operation
ESD protection at all pins
1.3 Applications
Broadband CPE/MoCA
WLAN/ISM/RFID
Wireless infrastructure (base station,
repeater, backhaul systems)
Industrial applications
E-metering
Satellite Master Antenna TV (SMATV)
1.4 Quick reference data
Table 1.
Quick reference data
Input and output impedances matched to 50
. Typical values at: V
CC
= 5 V; T
case
= 25
C; unless
otherwise specified.
Symbol Parameter
f
G
p
P
L(1dB)
IP3
O
[1]
[2]
Conditions
[1]
Min
400
9.0
26
[2]
Typ
-
28
Max
Unit
dB
dBm
dBm
frequency
power gain
output power at 1 dB gain compression
output third-order intercept point
f = 2140 MHz
f = 2140 MHz
f = 2140 MHz
2700 MHz
-
11.0 13.0
40.0 42.5 -
Operation outside this range is possible but not guaranteed.
P
L
= 17 dBm per tone; spacing = 1 MHz.
NXP Semiconductors
BGA7027
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
V
CC(RF)
GND
RF_IN
[1]
[2]
[1]
Simplified outline
Graphic symbol
3
2
3
2
1
1
sym130
[1]
[2]
This pin is DC-coupled and requires an external DC-blocking capacitor.
The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Package
Name
BGA7027
-
Description
plastic surface-mounted package; exposed die pad for good
heat transfer; 3 leads
Version
SOT89
Type number
4. Functional diagram
BIAS
ENABLE
BANDGAP
V/I
CONVERTER
RF_IN
3
1
V
CC(RF)
2
GND
014aab020
Fig 1.
Functional diagram
BGA7027
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 26 November 2010
2 of 21
NXP Semiconductors
BGA7027
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
P
i(RF)
T
case
T
j
V
ESD
Parameter
supply voltage
RF input power
case temperature
junction temperature
electrostatic discharge
voltage
Human Body Model (HBM);
according to
JEDEC standard 22-A114E
Charged Device Model (CDM);
according to
JEDEC standard 22-C101B
[1]
Withstands switching between zero and maximum P
i(RF)
Conditions
f = 2140 MHz; switched
[1]
Min
-
-
40
-
-
Max
5.7
28
+85
150
2000
Unit
V
dBm
C
C
V
-
500
V
6. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 85
C;
V
CC
= 5 V;
I
CC
= 165 mA
Typ
38
Unit
K/W
7. Static characteristics
Table 6.
Static characteristics
Input and output impedances matched to 50
. Typical values at T
case
= 25
C,
unless otherwise specified.
Symbol
V
CC
I
CC
Parameter
supply voltage
supply current
V
CC
= 5.0 V
Conditions
Min
-
140
Typ
5.0
165
Max
-
190
Unit
V
mA
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Input and output impedances matched to 50
. Typical values at V
CC
= 5 V; T
case
= 25
C, NXP
application circuit; unless otherwise specified.
Symbol Parameter
f
G
p
frequency
power gain
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
Conditions
[1]
[2]
[2]
[2]
Min
400
-
-
9.0
Typ
-
19.0
11.5
11.0
Max
2700
-
-
13.0
Unit
MHz
dB
dB
dB
BGA7027
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 26 November 2010
3 of 21
NXP Semiconductors
BGA7027
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 7.
Dynamic characteristics
…continued
Input and output impedances matched to 50
. Typical values at V
CC
= 5 V; T
case
= 25
C, NXP
application circuit; unless otherwise specified.
Symbol Parameter
P
L(1dB)
output power at 1 dB gain
compression
Conditions
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
IP3
O
output third-order intercept point
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
NF
noise figure
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
RL
in
input return loss
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
RL
out
output return loss
f = 940 MHz
f = 1960 MHz
f = 2140 MHz
[1]
[2]
[3]
Operation outside this range is possible but not guaranteed.
Defined at P
i(RF)
=
40
dBm; small signal conditions.
P
L
= 17 dBm per tone; spacing = 1 MHz.
[2]
[2]
[2]
[2]
[2]
[2]
[3]
[3]
[3]
Min
-
-
26.0
-
-
40.0
-
-
-
-
-
-
-
-
-
Typ
29.0
27.5
28.0
41.5
43.0
42.5
2.6
3.8
3.9
16
8
8
11
13
15
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
9. Scattering parameters
Table 8.
Scattering parameters, MMIC only
V
CC
= 5 V; I
CC
= 165 mA; T
case
= 25
C.
f (MHz)
s
11
Magnitude
(ratio)
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
BGA7027
s
21
Angle
(degree)
178
176
173
171
168
165
162
160
157
154
152
150
149
148
Magnitude
(ratio)
8.03
6.55
5.55
4.80
4.24
3.80
3.46
3.14
2.85
2.61
2.39
2.20
2.03
1.88
Angle
(degree)
93
89
85
82
79
76
72
69
66
63
61
58
56
54
s
12
Magnitude
(ratio)
0.01
0.01
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
Angle
(degree)
49
53
55
56
56
56
55
54
53
52
50
49
48
47
s
22
Magnitude
(ratio)
0.76
0.75
0.75
0.75
0.75
0.75
0.76
0.76
0.76
0.76
0.77
0.78
0.78
0.79
Angle
(degree)
176
178
179
177
175
173
170
167
165
163
161
160
159
157
© NXP B.V. 2010. All rights reserved.
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.93
0.93
0.93
0.93
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 26 November 2010
4 of 21
NXP Semiconductors
BGA7027
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 8.
Scattering parameters, MMIC only
…continued
V
CC
= 5 V; I
CC
= 165 mA; T
case
= 25
C.
f (MHz)
s
11
Magnitude
(ratio)
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
0.94
0.94
0.94
0.93
0.93
0.93
0.92
0.91
0.91
0.89
Angle
(degree)
147
146
146
146
147
147
147
147
148
147
s
21
Magnitude
(ratio)
1.75
1.64
1.53
1.45
1.39
1.33
1.29
1.26
1.24
1.23
Angle
(degree)
63
51
50
49
49
48
48
47
46
45
s
12
Magnitude
(ratio)
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.06
0.06
Angle
(degree)
47
46
46
46
46
45
45
45
45
44
s
22
Magnitude
(ratio)
0.80
0.80
0.80
0.81
0.81
0.81
0.80
0.80
0.80
0.79
Angle
(degree)
157
157
157
157
157
158
159
160
160
161
10. Reliability information
Table 9.
Life test
HTOL
Reliability
Conditions
Intrinsic failure rate
according to JESD85; confidence level 60 %; T
j
= 55
C;
4
activation energy = 0.7 eV; acceleration factor determined
according to the Arrhenius equation
11. Moisture sensitivity
Table 10.
Moisture sensitivity level
Class
1
Test methodology
JESD-22-A113
BGA7027
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 26 November 2010
5 of 21
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