2ED2304S06FXLSA1 datasheet, PDF

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2ED2304S06FXLSA1: DescriptionGate driver HVIC; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size590KB，15 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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2ED2304S06FXLSA1 Overview

Gate driver HVIC

2ED2304S06FXLSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	,
Reach Compliance Code	compliant
Humidity sensitivity level	2
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED

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2ED2304S06F

650 V Half Bridge Gate Driver with Integrated Bootstrap Diode

Feature list

•

Infineon Thin-film-SOI-technology

Fully operational to +650 V

Floating channel designed for bootstrap operation

Output source/sink current capability +0.36 A/-0.7 A

Integrated Ultra-fast, low

DSON

Bootstrap Diode

Tolerant to negative transient voltage up to -50 V

(Pulse width is up 500 ns) given by SOI-technology

10 ns typ., 60 ns max. propagation delay matching

dV/dt immune ±50 V

Gate drive supply range from 10 V to 20 V

Undervoltage lockout for both channels

3.3 V, 5 V and 15 V input logic compatible

RoHS compliant

Product summary

•

OFFSET

O+/-

(typ.)

OUT

Delay Matching

Internal deadtime

on/off

(typ.)

= 670 V max.

= 0.36 A/0.7 A

= 10 V - 17.5 V

= 60 ns max.

= 75 ns

= 310 ns/300 ns

Package

Potential applications

•

Motor drives, General purpose inverters

Refrigeration compressors

Half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Description

The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent

ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL

logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver

cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high

side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent

protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

Figure 1

Datasheet

Typical connection diagram

Please read the Important Notice and Warnings at the end of this document

Rev.

2.11

2018‐09‐12

www.infineon.com

2ED2304S06F

Table of contents

650 V Half Bridge Gate Driver with Integrated Bootstrap Diode

Table of contents

Feature list

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Potential applications

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Product validation

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Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Device information

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Table of contents

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5.1

5.2

Block diagram

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Lead definitions

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Absolute maximum ratings

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Recommended operating conditions

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Electrical characteristics

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Static electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Dynamic electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package information DSO-8

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Qualification information

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