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AT25SL321-UAUE-T

Description
NOR Flash 10-WLCSP, IND TEMP, 1.8V, T&R
Categorysemiconductor    Memory IC    NOR flash memory   
File Size7MB,79 Pages
ManufacturerAdesto Technologies
Environmental Compliance
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AT25SL321-UAUE-T Overview

NOR Flash 10-WLCSP, IND TEMP, 1.8V, T&R

AT25SL321-UAUE-T Parametric

Parameter NameAttribute value
MakerAdesto Technologies
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxWLCSP-10
seriesAT25SL321
storage32 Mbit
maximum clock frequency104 MHz
Interface TypeQPI, SPI
Timing typeSynchronous
Supply voltage - min.1.7 V
Supply voltage - max.2 V
Supply current—max.20 mA
Minimum operating temperature- 40 C
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
storage typeFlash
speed104 MHz
Factory packaging quantity5000
AT25SL321
32-Mbit, 1.7V Minimum
SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
Features
Single 1.7V - 2.0V Supply
Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual Output Read and Quad I/O Program and Read
Supports QPI Program and Read
104 MHz* Maximum Operating Frequency
Clock-to-Output (t
V1
) of 6 ns
Up tp 65MB/S continuous data transfer rate
Full Chip Erase
Flexible, Optimized Erase Architecture for Code and Data Storage Applications
0.6 ms Typical Page Program (256 Bytes) Time
60 ms Typical 4-Kbyte Block Erase Time
200 ms Typical 32-Kbyte Block Erase Time
300 ms Typical 64-Kbyte Block Erase Time
Hardware Controlled Locking of Protected Blocks via WP Pin
4K-bit secured One-Time Programmable Security Register
Hardware Write Protection
Serial Flash Discoverable Parameters (SFDP) Register
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Dual or Quad Input Byte/Page Program (1 to 256 Bytes)
Accelerated programming mode via 9V ACC pin
Erase/Program Suspend and Resume
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
2µA Deep Power-Down Current (Typical)
10µA Standby current (Typical)
5mA Active Read Current (Typical)
Endurance: 100,000 program/erase cycles (4KB, 32KB or 64KB blocks)
Data Retention: 20 Years
Industrial Temperature Range: -40°C to +85°C
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (208-mil)
8-pad DFN (6 x 5 x 0.6 mm)
24-ball Ball Grid Array (BGA)
8 and 10-ball WLCSP, die Ball Grid Array (dBGA)
8-pad USON(3 x 4 x 0.55mm)
Die in Wafer Form
DS-25SL321–112F–3/2017
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