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GS81302Q10GE-300I

Description
Static random access memory 1.8 or 1.5V 16M x 9 144M
Categorysemiconductor    Memory IC    Static random access memory   
File Size2MB,29 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
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GS81302Q10GE-300I Overview

Static random access memory 1.8 or 1.5V 16M x 9 144M

GS81302Q10GE-300I Parametric

Parameter NameAttribute value
MakerGSI Technology
Product Categorystatic random access memory
storage144 Mbit
organize16 M x 9
maximum clock frequency300 MHz
Interface TypeParallel
Supply voltage - max.1.9 V
Supply voltage - min.1.7 V
Supply current—max.1.26 A
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
Installation styleSMD/SMT
Package/boxBGA-165
EncapsulationTray
storage typeQDR-II
seriesGS81302Q10GE
typeSigmaQuad-II+ B2
Factory packaging quantity10
GS81302Q07/10/19/37E-318/300/250/200
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.0 clock Latency
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• On-Die Termination (ODT) on Data (D), Byte Write (BW),
and Clock (K, K) inputs
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaQuad-II+
TM
Burst of 2 SRAM
318 MHz–200 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302Q07/10/19/37E SigmaQuad-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaQuad-II+ B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed. Therefore the address field of a
SigmaQuad-II+ B2 RAM is always one address pin less than
the advertised index depth (e.g., the 16M x 8 has an 8M
addressable index).
SigmaQuad™ Family Overview
The GS81302Q07/10/19/37E are built in compliance with the
SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302Q07/10/19/37E SigmaQuad SRAMs
Parameter Synopsis
-318
tKHKH
tKHQV
3.145 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
Rev: 1.02f 8/2017
1/28
© 2010, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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