S29AL008J70BFA010 datasheet, PDF

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S29AL008J70BFA010: DescriptionNOR FlashNor; Categorysemiconductor Memory IC NOR flash memory; File Size743KB，51 Pages; ManufacturerCypress Semiconductor; Environmental Compliance

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S29AL008J70BFA010 Parametric

Parameter Name	Attribute value
Maker	Cypress Semiconductor
Product Category	NOR flash memory
Installation style	SMD/SMT
Package/box	FBGA-48
series	S29AL008J
storage	8 Mbit
Interface Type	Parallel
organize	1 M x 8
Timing type	Asynchronous
Data bus width	8 bit
Supply voltage - min.	2.7 V
Supply voltage - max.	3.6 V
Supply current—max.	20 mA
Minimum operating temperature	- 40 C
Maximum operating temperature	+ 85 C
qualifications	AEC-Q100
Encapsulation	Tray
storage type	NOR
speed	70 ns
standard	Common Flash Interface (CFI)
Factory packaging quantity	338

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S29AL008J

8-Mbit (1M × 8-Bit/512K × 16-Bit), 3 V,

Boot Sector Flash

Distinctive Characteristics

Architectural Advantages



Single Power Supply Operation

– Full voltage range: 2.7 to 3.6 volt read and write operations

for battery-powered applications



Manufactured on 110 nm Process Technology

– Fully compatible with 200 nm S29AL008D



Secured Silicon Sector region

– 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random Electronic

Serial Number accessible through a command sequence

– May be programmed and locked at the factory or by the

customer



Flexible Sector Architecture

– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64

Kbyte sectors (byte mode)

– One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32

Kword sectors (word mode)



Sector Group Protection Features

– A hardware method of locking a sector to prevent any

program or erase operations within that sector

– Sectors can be locked in-system or via programming

equipment

– Temporary Sector Unprotect feature allows code changes

in previously locked sectors



Unlock Bypass Program Command

– Reduces overall programming time when issuing multiple

program command sequences



Top or Bottom Boot Block Configurations Available



Compatibility with JEDEC standards

– Pinout and software compatible with single-power supply

Flash

– Superior inadvertent write protection

Performance Characteristics



High Performance

– Access times as fast as 55 ns

– Extended temperature range (–40°C to +125°C)

– Automotive AEC-Q100 Grade 3 (–40 °C to +85 °C)

– Automotive AEC-Q100 Grade 1 (–40 °C to +125 °C)



Ultra Low Power Consumption (typical values at 5 MHz)

– 0.2 µA Automatic Sleep mode current

– 0.2 µA standby mode current

– 7 mA read current

– 20 mA program/erase current



Cycling Endurance: 1,000,000 cycles per sector typical



Data Retention: 20 years typical

Package Options



48-ball Fine-pitch BGA



48-pin TSOP

Software Features



CFI (Common Flash Interface) Compliant

– Provides device-specific information to the system,

allowing host software to easily reconfigure for different

Flash devices



Erase Suspend/Erase Resume

– Suspends an erase operation to read data from, or

program data to, a sector that is not being erased, then

resumes the erase operation



Data# Polling and Toggle Bits

– Provides a software method of detecting program or erase

operation completion

Hardware Features



Ready/Busy# Pin (RY/BY#)

– Provides a hardware method of detecting program or

erase cycle completion



Hardware Reset Pin (RESET#)

– Hardware method to reset the device to reading array data



WP# input pin

– For boot sector devices: at V

, protects first or last

16 Kbyte sector depending on boot configuration (top boot

or bottom boot)

Cypress Semiconductor Corporation

Document Number: 002-00778 Rev. *P

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised April 11, 2018

S29AL008J

General Description

The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in

48-ball Fine-pitch BGA (0.8 mm pitch), and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-

wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt V

supply. A 12.0 V V

or 5.0 V

are not required for write or erase operations. The device can also be programmed in standard

EPROM programmers.

The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus

contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

The device requires only a

single 3.0 volt power supply

for both read and write functions. Internally generated and regulated

voltages are provided for the program and erase operations.

The S29AL008J is entirely command set compatible with the

JEDEC single-power-supply Flash standard.

Commands are written

to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine

that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming

and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This initiates the

Embedded Program

algorithm—an

internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The

Unlock Bypass

mode

facilitates faster programming times by requiring only two write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the

Embedded Erase

algorithm—an internal

algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During

erase, the device automatically times the erase pulse widths and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7

(Data# Polling) and DQ6 (toggle)

status bits.

After a program or erase cycle has been completed, the device is ready to read array

data or accept another command.

The

sector erase architecture

allows memory sectors to be erased and reprogrammed without affecting the data contents of other

sectors. The device is fully erased when shipped from the factory.

Hardware data protection

measures include a low V

detector that automatically inhibits write operations during power

transitions. The

hardware sector protection

feature disables both program and erase operations in any combination of the sectors

of memory. This can be achieved in-system or via programming equipment.

The

Erase Suspend/Erase Resume

feature enables the user to put erase on hold for any period of time to read data from, or

program data to, any sector that is not selected for erasure. True background erase can thus be achieved.

The

hardware RESET# pin

terminates any operation in progress and resets the internal state machine to reading array data. The

RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system

microprocessor to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters

the

automatic sleep mode.

The system can also place the device into the

standby mode.

Power consumption is greatly reduced in

both these modes.

Cypress Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality,

reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim

tunneling. The data is programmed using hot electron injection.

Document Number: 002-00778 Rev. *P

Page 2 of 50

S29AL008J70BFA010 Related Products

	S29AL008J70BFA010	S29AL008J70TFA023
Description	NOR FlashNor	NOR FlashNor
Maker	Cypress Semiconductor	Cypress Semiconductor
Product Category	NOR flash memory	NOR flash memory
series	S29AL008J	S29AL008J
storage type	NOR	NOR
Factory packaging quantity	338	1000
Encapsulation	Tray	Reel

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