74HC20; 74HCT20
Dual 4-input NAND gate
Rev. 5 — 27 March 2019
Product data sheet
1. General description
The 74HC20; 74HCT20 is a dual 4-input NAND gate. Inputs include clamp diodes. This enables
the use of current limiting resistors to interface inputs to voltages in excess of V
CC
.
2. Features and benefits
•
•
•
Complies with JEDEC standard JESD7A
Low-power dissipation
Input levels:
•
For 74HC20: CMOS level
•
For 74HCT20: TTL level
ESD protection:
•
HBM JESD22-A114F exceeds 2 000 V
•
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from -40 °C to +80 °C and from -40 °C to +125 °C.
•
•
•
3. Ordering information
Table 1. Ordering information
Type number
Package
Temperature range Name
74HC20D
74HCT20D
74HC20DB
74HCT20DB
74HC20PW
-40 °C to +125 °C
-40 °C to +125 °C
SSOP14
-40 °C to +125 °C
SO14
Description
plastic small outline package; 14 leads;
body width 3.9 mm
plastic shrink small outline package; 14 leads;
body width 5.3 mm
Version
SOT108-1
SOT337-1
SOT402-1
TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
4. Functional diagram
1
2
4
5
9
10
12
13
1A
1B
1C
1D
2A
2B
2C
2D
aaa-004014
1Y
6
1
2
4
5
1A
1B
1C
1D
2A
2B
2C
2D
aaa-004015
1Y
6
2Y
8
9
10
12
13
2Y
8
Fig. 1.
Functional diagram
Fig. 2.
Logic symbol
Nexperia
74HC20; 74HCT20
Dual 4-input NAND gate
1
2
4
5
&
6
A
B
9
10
12
13
aaa-004016
&
8
Y
C
D
aaa-004017
Fig. 3.
IEC Logic symbol
Fig. 4.
Logic diagram
5. Pinning information
5.1. Pinning
74HC20
74HCT20
1A
1B
n.c.
1C
1D
1Y
GND
1
2
3
4
5
6
7
aaa-004018
14 V
CC
13 2D
12 2C
11 n.c.
10 2B
9
8
2A
2Y
1A
1B
n.c.
1C
1D
1Y
GND
1
2
3
4
5
6
7
74HC20
74HCT20
14 V
CC
13 2D
12 2C
11 n.c.
10 2B
9
8
aaa-004019
2A
2Y
Fig. 5.
Pin configuration SOT108-1
Fig. 6.
Pin configuration SOT337-1 and SOT402-1
5.2. Pin description
Table 2. Pin description
Symbol
1A, 1B, 1C, 1D
n.c.
1Y
GND
2Y
2A, 2B, 2C, 2D
V
CC
Pin
1, 2, 4, 5
3, 11
6
7
8
9, 10, 12, 13
14
Description
data input
not connected
data output
ground (0 V)
data output
data input
supply voltage
74HC_HCT20
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 5 — 27 March 2019
2 / 12
Nexperia
74HC20; 74HCT20
Dual 4-input NAND gate
6. Functional description
Table 3. Function table
H = HIGH voltage level; L = LOW voltage level; X = don’t care.
Input
nA
L
X
X
X
H
nB
X
L
X
X
H
nC
X
X
L
X
H
nD
X
X
X
L
H
Output
nY
H
H
H
H
L
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< -0.5 V or V
I
> V
CC
+ 0.5 V
V
O
< -0.5 V or V
O
> V
CC
+ 0.5 V
-0.5 V < V
O
< V
CC
+ 0.5 V
[1]
[1]
Min
-0.5
-
-
-
-
-50
-65
Max
+7
±20
±20
±25
50
-
+150
500
Unit
V
mA
mA
mA
mA
mA
°C
mW
SO14, and (T)SSOP14 packages
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SO14 package: P
tot
derates linearly with 8 mW/K above 70 °C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60 °C.
8. Recommended operating conditions
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
V
CC
V
I
V
O
T
amb
Δt/ΔV
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
-40
-
-
-
74HC20
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
-40
-
-
-
74HCT20
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
°C
ns/V
ns/V
ns/V
Unit
74HC_HCT20
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 5 — 27 March 2019
3 / 12
Nexperia
74HC20; 74HCT20
Dual 4-input NAND gate
9. Static characteristics
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC20
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
V
I
= V
IH
or V
IL
HIGH-level
output voltage
I
O
= -20 μA; V
CC
= 2.0 V
I
O
= -20 μA; V
CC
= 4.5 V
I
O
= -20 μA; V
CC
= 6.0 V
I
O
= -4.0 mA; V
CC
= 4.5 V
I
O
= -5.2 mA; V
CC
= 6.0 V
V
OL
V
I
= V
IH
or V
IL
LOW-level
output voltage
I
O
= 20 μA; V
CC
= 2.0 V
I
O
= 20 μA; V
CC
= 4.5 V
I
O
= 20 μA; V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage
current
V
I
= V
CC
or GND; V
CC
= 6.0 V
1.5
3.15
4.2
-
-
-
1.9
4.4
5.9
3.98
5.48
-
-
-
-
-
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
3.5
-
-
-
0.5
1.35
1.8
-
-
-
-
-
0.1
0.1
0.1
0.26
0.26
±0.1
2
-
1.5
3.15
4.2
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
-
-
-
-
-
-
0.5
1.35
1.8
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
±1
20
-
1.5
3.15
4.2
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
-
-
-
0.5
1.35
1.8
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
±1
40
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
μA
μA
pF
Conditions
Min
25 °C
Typ
Max
-40 °C to +85 °C -40 °C to +125 °C Unit
Min
Max
Min
Max
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
input
capacitance
HIGH-level
input voltage
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
74HCT20
V
IH
V
IL
V
OH
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
HIGH-level
output voltage
I
O
= -20 μA
I
O
= -4.0 mA
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
LOW-level
output voltage
I
O
= 20 μA
I
O
= 5.2 mA
input leakage
current
V
I
= V
CC
or GND; V
CC
= 5.5 V
4.4
3.98
-
-
-
-
4.5
4.32
0
0.15
-
-
-
-
0.1
0.26
±0.1
2
4.4
3.84
-
-
-
-
-
-
0.1
0.33
±1
20
4.4
3.7
-
-
-
-
-
-
0.1
0.4
±1
40
V
V
V
V
μA
μA
V
OL
I
I
I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
74HC_HCT20
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 5 — 27 March 2019
4 / 12
Nexperia
74HC20; 74HCT20
Dual 4-input NAND gate
Conditions
Min
-
25 °C
Typ
30
Max
108
-40 °C to +85 °C -40 °C to +125 °C Unit
Min
-
Max
135
Min
-
Max
147
μA
Symbol Parameter
ΔI
CC
additional
per input pin; V
I
= V
CC
- 2.1 V;
supply current I
O
= 0 A; other inputs at V
CC
or
GND; V
CC
= 4.5 V to 5.5 V
input
capacitance
C
I
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for test circuit see
Fig. 8.
Symbol Parameter
Conditions
Min
74HC20
t
pd
propagation delay nA, nB, nC or nD to nY; see
Fig. 7
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 5.0 V; C
L
= 15 pF
t
t
transition time
nY; see
Fig. 7
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation per package; V
I
= GND to V
CC
capacitance
propagation delay nA, nB, nC or nD to nY; see
Fig. 7
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
t
t
C
PD
[1]
[2]
[3]
25 °C
Typ
Max
-40 °C to +125 °C Unit
Max
(85 °C)
Max
(125 °C)
[1]
-
-
-
-
[2]
-
-
-
[3]
-
19
7
6
22
75
15
13
-
95
19
16
-
110
22
19
-
ns
ns
ns
pF
28
10
8
8
90
18
15
-
115
23
20
-
135
27
23
-
ns
ns
ns
ns
74HCT20
t
pd
[1]
-
-
[2]
-
-
16
13
7
17
28
-
15
-
35
-
19
-
42
-
22
-
ns
ns
ns
pF
transition time
nY; V
CC
= 4.5 V; see
Fig. 7
power dissipation per package; V
I
= GND to V
CC
- 1.5 V
[3]
capacitance
t
pd
is the same as t
PHL
and t
PLH
.
t
t
is the same as t
THL
and t
TLH
.
C
PD
is used to determine the dynamic power dissipation (P
D
in μW):
2
2
P
D
= C
PD
x V
CC
x f
i
x N + ∑(C
L
x V
CC
x f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
2
∑(C
L
x V
CC
x f
o
) = sum of outputs.
74HC_HCT20
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 5 — 27 March 2019
5 / 12
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