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BSC082N10LS G

Description
MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size668KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC082N10LS G Overview

MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2

BSC082N10LS G Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxTDSON-8
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage100 V
Id-continuous drain current13.8 A
Rds On - drain-source on-resistance8.2 mOhms
Vgs - gate-source voltage20 V
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation156 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high1.27 mm
length5.9 mm
seriesOptiMOS 2
Transistor type1 N-Channel
width5.15 mm
Fall time12 ns
Rise Time24 ns
Factory packaging quantity5000
Typical shutdown delay time53 ns
Typical switch-on delay time19 ns
unit weight200 mg
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