Bulletin I27117 rev. C 03/02
SERIES
IRK.136, .142, .162
THYRISTOR/DIODE and
THYRISTOR/THYRISTOR
Features
High Voltage
Electrically Isolated by DBC Ceramic ( Al
2
O
3
)
3500 V
RMS
Isolating Voltage
Industrial Standard Package
High Surge Capability
Glass Passivated Chips
Modules uses High Voltage Power thyristor/diodes
in three Basic Configurations
Simple Mounting
UL E78996 approved
NEW INT-A-pak Power Modules
135 A
140 A
160 A
Applications
DC Motor Control and Drives
Battery Charges
Welders
Power Converters
Lighting Control
Heat and Temperature Control
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t @ 50Hz
@ 60Hz
I
√t
V
RRM
T
J
range
2
CASE STYLE NEW INT-A-PAK
IRK.136.. IRK.142.. IRK.162.. Units
135
85
300
3200
3360
51.5
47
515.5
140
85
310
4500
4712
102
92.5
1013
400 to 1600
- 40 to 125
160
85
355
4870
5100
119
108
1190
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
°C
Document Number: 93743
www.vishay.com
1
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
Electrical Specifications
Voltage Ratings
Type number
Voltage
V
RRM
/V
DRM
, Maximum repetitive V
RSM
/V
DSM
, Maximum non-repetitive
Code
peak reverse voltage
peak reverse voltage
V
V
04
08
12
14
16
400
800
1200
1400
1600
500
900
1300
1500
1700
I
RRM /
I
DRM
@ 125°C
mA
50
IRK.136
IRK.142
IRK.162
Forward Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Maximum peak, one-cycle
on-state, non-repetitive
surge current
IRK.136
135
85
300
3200
3360
2700
2800
IRK.142
140
85
310
4500
4712
3785
3963
102
92.5
71.6
65.4
1013
0.83
1
1.78
1.43
1.55
IRK.162
160
85
355
4870
5100
4100
4300
119
108
84
76.7
1190
0.8
0.98
1.67
1.38
1.54
Units Conditions
A
°C
A
A
as AC switch
t = 10ms
No voltage
180° conduction, half sine wave
t = 8.3ms reapplied
t = 10ms
100% V
RRM
Sine half wave,
Initial T
J
= T
J
max.
No voltage
t = 8.3ms reapplied
KA
2
s
t = 10ms
I
2
t
Maximum I
2
t for fusing
51.5
47
36.5
33.3
t = 8.3ms reapplied
t = 10ms
100% V
RRM
t = 8.3ms reapplied
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
(I >
π
x I
T(AV)
), @ T
J
max.
mΩ
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
(I >
π
x I
T(AV)
), @ T
J
max.
V
I
TM
=
π
x I
T(AV)
, T
J
= 25°C, 180°conduction
Anode supply = 6V initial I
T
= 30A, T
J
= 25°C
Anode supply = 6V resistive load = 1Ω
Gate pulse: 10V, 100µs, T
J
= 25°C
I
2
√t
Maximum I
2
√t
for fusing
voltage
515.5
0.86
1.05
2.02
1.65
1.57
V
T(TO)1
Low level value of threshold
V
T(TO)2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum forward voltage drop
Maximum holding current
Maximum latching current
200
400
mA
mA
Switching
t
gd
t
gr
t
q
Typical delay time
Typical rise time
Typical turn-off time
1
2
50 - 200
µs
T
J
= 25
o
C
T
J
= 25
o
C
Gate Current=1A dIg/
dt
=1A/µs
Vd=0,67% V
DRM
I
TM
= 300 A; -dI/dt = 15 A/µs; T
J
= T
J
max
V
r
= 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω
Document Number: 93743
www.vishay.com
2
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
Blocking
I
RRM
I
DRM
V
INS
Maximum peak reverse and
off-state leakage current
RMS isolation voltage
3500
1000
V
V/µs
50Hz, circuit to base, all terminals shorted, t = 1s
T
J
= T
J
max., exponential to 67% rated V
DRM
50
mA
T
J
= 125
o
C
dV/dt critical rate of rise of off-state voltage
Triggering
Parameter
P
GM
I
GM
-V
GT
V
GT
Max. peak gate power
IRK.136
IRK.142
12
3
3
10
4
2.5
1.7
270
150
80
0.3
10
300
IRK.162
Units Conditions
W
W
A
V
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
mA
V
mA
A/µs
@ T
J
= T
J
max., I
TM
= 400A rated V
DRM
applied
T
J
= 25°C
Anode supply = 6V, resistive
load; Ra = 1Ω
Anode supply = 6V, resistive
load; Ra = 1Ω
tp
≤
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
≤
5ms, T
J
= T
J
max.
P
G(AV)
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. required DC gate
voltage to trigger
I
GT
Max. required DC gate
current to trigger
V
GD
I
GD
di/
dt
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
wt
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
IAP to heatsink
torque ± 10% busbar to IAP
Approximate weight
Case Style
0.18
IRK.136
IRK.142
-40 to 125
-40 to 150
0.18
0.05
4 to 6
4 to 6
200 (7.1)
IRK.162
Units Conditions
°C
°C
0.16
K/W
K/W
Nm
g(oz)
DC operation, per junction
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
New Int-A-Pak
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.136
IRK.142
IRK.162
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.012
0.0022
0.0036
90
o
0.014
0.0023
0.0039
60
o
0.015
0.0023
0.0041
30
o
0.017
0.0020
0.0040
Units
0.007
0.0019
0.0030
0.01
0.0019
0.0031
0.013
0.0020
0.0032
0.0155
0.0020
0.0033
0.017
0.0021
0.0034
0.009
0.0018
0.0029
K/W
Document Number: 93743
www.vishay.com
3
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
Ordering Information Table
Device Code
IRK
1
1
2
3
4
-
-
-
-
T
2
162
3
/
16
4
Module Type
Circuit Configuration
Current Rating: I
T(AV)
Voltage Code: Code x 100 = V
RRM
Outline Table
Dimensions are in millimeters and [inches]
IRKT
1
IRKH
1
IRKL
1
2
2
2
3
3
5
4
3
7
6
5 7
4 6
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 93743
www.vishay.com
4
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
M a xim um Allo w a ble C ase Tem peratu re ( C )
M axim um Allow a b le C ase Tem perature ( C )
13 0
12 0
11 0
C o nd uctio n Angle
IRK.136.. Series
R
thJC
(D C ) = 0.18 K/W
13 0
12 0
11 0
IRK .1 3 6 .. Se ries
R
thJC
(D C ) = 0 .1 8 K/W
C o n d u c tio n P e rio d
10 0
90
80
70
0
20
40
60
80
10 0
12 0
14 0
Averag e Forw ard C urren t (A )
Fig. 1 - Current Ratings Characteristics
10 0
30
90
80
70
0
50
100
15 0
2 00
25 0
Averag e O n-state C urren t (A )
Fig. 2 - Current Ratings Characteristics
30
60
90
120
180
60
90
120
180
DC
M a xim um A vera ge O n-state Pow er Loss (W )
250
200
150
100
50
0
0
180
120
90
60
30
M axim um Averag e O n-state Pow er Loss (W )
300
350
300
250
200
150
100
50
0
0
50
1 00
C o n d uc tio n P eriod
DC
180
120
90
60
30
RM S Lim it
RM S Lim it
C o nd uctio n Angle
IRK .136.. Se ries
Per Junction
T
J
= 125 C
30
60
90
12 0
15 0
IRK .136.. Se ries
Per Junction
T
J
= 12 5 C
1 50
2 00
2 50
Averag e O n-state C urrent (A)
Fig. 3 - On-State Power Loss Characteristics
A vera ge O n -sta te C urrent (A)
Fig. 4 - On-State Power Loss Characteristics
Pea k H alf Sin e W a ve O n -sta te C urren t (A )
Peak Ha lf Sine W a ve O n -sta te C urrent (A)
30 0 0
28 0 0
26 0 0
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
14 0 0
12 0 0
1
A t A ny R ate d Lo ad Co nditio n A n d W ith
R ated V
RRM
A pplied Follo w ing Surge .
35 0 0
In itial T
J
= 125 C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
30 0 0
Maxim um No n Repetitive Surge Curre nt
V ers us Pulse Train D uratio n. C ontrol
O f Co nductio n M ay Not Be M aintained.
In itial T
J
= 125 C
No V oltag e Re ap plie d
Ra te d V
Re ap plie d
RRM
25 0 0
20 0 0
15 0 0
IRK.1 36.. Se ries
Pe r Ju nction
10 0 0
0 .0 1
0.1
Pulse Tra in D ura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
IRK.136.. Series
Per Junction
10
10 0
1
Num b er O f Eq ua l Am p litud e H a lf C yc le C urre nt P ulses (N)
Fig.5 - Maximum Non-Repetitive Surge Current
Document Number: 93743
www.vishay.com
5
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
