TGS2355-SM
®
0.5-6 GHz 100 Watt GaN Switch
Product Overview
Qorvo’s TGS2355–SM is a Single-Pole, Double–Throw
(SPDT) reflective switch fabricated on Qorvo’s QGaN25
0.25um GaN on SiC production process.
Operating from 0.5 to 6GHz, the TGS2355–SM typically
supports up to 100W input power (pulsed) handling at
control voltages of 0/−40 V. This switch maintains low
insertion loss of 1.1 dB or less and greater than 40 dB
isolation, making it ideal for high power switching
applications across both defense and commercial
platforms.
The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN
package comprised of an aluminum-nitride base with a LCP
epoxy-sealed lid. This, along with the minimal DC power
consumption, allows for easy system integration.
Lead–free and RoHS compliant.
32 Pad 5 x 5 mm QFN Package
Key Features
•
Frequency Range: 0.5 – 6 GHz
•
Insertion Loss: < 1.1 dB
•
Power Handling: 50 dBm (Pulsed)
•
Isolation: 40 dB typical.
•
Return Loss: > 15 dB
•
Control Voltages: 0 V/−40 V
•
Switching Speed: < 50 ns
•
Reflective Switch
•
Package Dimensions: 5.0 x 5.0 x 1.42 mm
Functional Block Diagram
J3, RF2
5
V
C2
Applications
•
Commercial and Military Radar
•
Communications
•
Electronic Warfare
•
Test Instruments
•
General Purpose
28, 29
J1,
RFC
3
•
High Power Switching
20
22
V
C1
J2, RF1
Ordering Information
Part No.
TGS2355–SM
1097066
Top View
Description
0.5–6 GHz 100 W GaN Switch
TGS2355–SM Evaluation Board
Data Sheet Rev. C, October 25, 2018 | Subject to change without notice
1 of 10
www.qorvo.com
TGS2355-SM
®
0.5-6 GHz 100 Watt GaN Switch
Absolute Maximum Ratings
Parameter
Control Voltage (V
C
)
Control Current (I
C
)
Power Dissipation
RF Input Power (pulsed, 10% Duty Cycle,
20us pulse width)
RF Input Power, CW, 50Ω, T = 85˚C
Mounting Temperature (30 sec)
Storage Temperature
Recommended Operating Conditions
Rating
−50 V
−3.5 / +3.5 mA
35 W
50.5 dBm
47 dBm
260 °C
−55 to 150 °C
Parameter
Frequency
Operating Temperature Range
Input Power Handling (Pulsed)
Control Voltage
Min
0.5
-40
Typ
+25
50
−40
Max
6
+85
Units
GHz
°C
dBm
V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
Parameter
Operational Frequency Range
P
0.1dB
Control Current (I
C
)
Insertion Loss
Input Return Loss – On-State
Output Return Loss – On-State
Isolation
Output Return Loss – Off-State (Isolated Port RL)
Switching Speed (10-90%, 90-10%, VC=-20V)
Third Order Intermodulation Distortion (F
C
=4 GHz)
Second Harmonic Level (F
0
=4 GHz)
Control Voltage
Insertion Loss Temperature Coefficient
On-State, 0.5 – 4 GHz
On-State, 4 – 6 GHz
Common Port Return Loss
Switched Port Return Loss
Off-State
Pulsed Input Power
Conditions
(1)
Min
0.5
Typ
50
1.0
0.7
1.1
15
15
40
2.0
50
-46
-40
-40
0.004
Max
6
Units
GHz
dBm
mA
dB
dB
dB
dB
dB
ns
dBc
dBc
-48
V
dB/ °C
Notes:
1. Test conditions unless otherwise noted: Temp= +25°C. Z
0
= 50 Ω, Vc = −40 V, parts mounted to EVB (page 6)
Data Sheet Rev. C, October 25, 2018 | Subject to change without notice
2 of 10
www.qorvo.com
TGS2355-SM
®
0.5-6 GHz 100 Watt GaN Switch
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW RF Input, Temp= +25 °C, parts mounted to EVB (page 6)
0.0
-0.5
-1.0
Insertion Loss vs. Frequency
Temp.= 25 C
0.0
-0.5
-1.0
Insertion Loss vs. Freq. vs. V
C2
VC1 = 0V, RF1 Path On
S21, S31 (dB)
-2.0
-2.5
-3.0
-3.5
-4.0
RF1 Path (S21) On
RF2 Path (S31) On
S21 (dB)
-1.5
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
VC2 = -20 V
VC2 = -30 V
VC2 = -40 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Frequency (GHz)
0.0
-0.5
-1.0
Insertion Loss vs. Freq. vs. Temp.
VC1 = 0V, VC2 = -40 V, RF1 Path ON
0
-10
-20
Isolation vs. Frequency
Temp.= 25 C
S21 (dB)
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
- 40 °C
+25 °C
+85 °C
S21, S31 (dB)
-30
-40
-50
-60
-70
-80
RF2 Path (S31) Off
RF1 Path (S21) Off
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Frequency (GHz)
0
-5
Return Loss vs. Frequency
Temp. = 25 C
RFC (S11)
RF1 Path (S22) On
RF2 Path (S33) On
0.0
Return Loss vs. Frequency
Temp. = 25 C
-0.5
-1.0
-1.5
-2.0
-2.5
Return Loss (dB)
-10
-15
-20
-25
-30
0
1
2
3
S22, S33 (dB)
-3.0
-3.5
-4.0
-4.5
-5.0
RF2 Path (S33) Off
RF1 Path (S22) Off
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. C, October 25, 2018 | Subject to change without notice
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TGS2355-SM
®
0.5-6 GHz 100 Watt GaN Switch
Performance Plots – Compression and Harmonics
Test conditions unless otherwise noted: parts mounted to EVB (page 9), Pulsed Input Power PW=100 us, DC=10%, T=+25 °C
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
Compression vs. Pin vs. Freq.
V
C1
= 0 V, V
C2
= -40 V, Temp. = 25 C
0.1 GHz
0.3 GHz
0.5 GHz
0.2 GHz
0.4 GHz
1.0 GHz
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
Compression vs. Pin vs. Freq.
V
C1
= 0 V, V
C2
= -40 V, Temp. = 25 C
Compression (dB)
Compression (dB)
2.0 GHz
3.0 GHz
4.0 GHz
5.2 GHz
6.0 GHz
35
38
41
44
47
50
35
38
41
44
47
50
Input Power (dBm)
Input Power (dBm)
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
Compression vs. Pin vs. Temp.
V
C1
= 0 V, V
C2
= -40 V, Freq. = 3.0 GHz
- 40 °C
+25 °C
+85 °C
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
Compression vs. Pin vs. V
C
V
C1
= 0 V, Freq. = 3.0 GHz, Temp. = 25 C
Compression (dB)
Compression (dB)
VC2 = -20 V
VC2 = -30 V
VC2 = -40 V
35
38
41
44
47
50
35
38
41
44
47
50
Input Power (dBm)
Input Power (dBm)
0
-10
Harmonic vs. Output Power
V
C1
= -40 V, V
C2
= 0 V, F0 = 3 GHz (CW)
0
-10
Harmonic vs. Output Power
V
C1
= -40 V, V
C2
= 0 V, F0 = 4 GHz (CW)
Harmonic Level (dBc)
-20
-30
-40
-50
-60
-70
-80
Harmonic Level (dBc)
2*F0 -40 °C
2*F0 25 °C
2*F0 85 °C
3*F0 -40 °C
3*F0 25 °C
3*F0 85 °C
-20
-30
-40
-50
-60
-70
-80
2*F0 -40 °C
2*F0 25 °C
2*F0 85 °C
3*F0 -40 °C
3*F0 25 °C
3*F0 85 °C
35
36
37
38
39
40
41
42
43
44
45
46
47
35
36
37
38
39
40
41
42
43
44
45
46
47
Output Power (dBm)
Output Power (dBm)
Data Sheet Rev. C, October 25, 2018 | Subject to change without notice
4 of 10
www.qorvo.com
TGS2355-SM
®
0.5-6 GHz 100 Watt GaN Switch
Performance Plots – Linearity
Test conditions unless otherwise noted: CW RF Input, Temp= +25 °C, parts mounted to EVB (page 6)
-10
-20
-30
IM3 vs. Input Power vs. Frequency
Temp. = +25 C, V
C1
= -40V, V
C2
= 0V, 100 MHz Tone Spacing
-10
-20
-30
IM5 vs. Input Power vs. Frequency
Temp. = +25 C, V
C1
= -40V, V
C2
= 0V, 100 MHz Tone Spacing
IM3 (dBc)
-50
-60
-70
Fc=4.0 GHz
IM5 (dBc)
-40
-40
-50
-60
-70
-80
-90
Fc=4.0 GHz
-80
-90
35
36
37
38
39
40
41
42
43
44
35
36
37
38
39
40
41
42
43
44
Input Power per Tone (dBm)
Input Power per Tone (dBm)
-10
-20
-30
IM3 vs. Input Power vs. Temperature
V
C1
= -40V, V
C2
= 0V, Freq. = 4.0 GHz, 100 MHz Spacing
- 40 °C
+25 °C
-10
-20
-30
IM5 vs. Input Power vs. Temperature
V
C1
= -40V, V
C2
= 0V, Freq. = 4.0 GHz, 100 MHz Spacing
- 40 °C
+25 °C
+85 °C
IM3 (dBc)
-50
-60
-70
-80
-90
IM5 (dBc)
39
40
41
42
43
44
-40
+85 °C
-40
-50
-60
-70
-80
-90
35
36
37
38
35
36
37
38
39
40
41
42
43
44
Input Power per Tone (dBm)
Input Power per Tone (dBm)
-10
-20
-30
IM3 vs. Input Power vs. V
C1
V
C2
= 0V, Freq. = 4.0 GHz, Temp. = +25 C, 10 MHz Spacing
-20 V
-30 V
-10
-20
-30
IM5 vs. Input Power vs. V
C1
V
C2
= 0V, Freq. = 4.0 GHz, Temp. = +25 C, 10 MHz Spacing
-20 V
-30 V
-40 V
IM3 (dBc)
-50
-60
-70
-80
-90
IM5 (dBc)
39
40
41
42
43
-40
-40 V
-40
-50
-60
-70
-80
-90
36
37
38
36
37
38
39
40
41
42
43
Input Power per Tone (dBm)
Input Power per Tone (dBm)
Data Sheet Rev. C, October 25, 2018 | Subject to change without notice
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