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S3M

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size36KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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S3M Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB

S3M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMCJ, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
WTE
POWER SEMICONDUCTORS
S3A – S3M
Pb
3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE
Features
!
!
!
!
!
!
!
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop
Surge Overload Rating to 100A Peak
Low Power Loss
A
Built-in Strain Relief
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G

E
SMC/DO-214AB
Dim
Min
Max
5.59
6.22
A
6.60
7.11
B
2.75
3.25
C
0.152
0.305
D
7.75
8.13
E
2.00
2.62
F
0.051
0.203
G
0.76
1.27
H
All Dimensions in mm
D
Mechanical Data
!
!
!
!
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.21 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
S3A
@T
A
=25°C unless otherwise specified
S3B
S3D
S3G
S3J
S3K
S3M
Unit
50
35
100
70
200
140
400
280
3.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
100
1.20
5.0
250
2.5
60
13
-65 to +150
A
V
µA
µS
pF
°C/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
S3A – S3M
1 of 4
© 2006 Won-Top Electronics

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