PHOTODIODE
Si PIN photodiode
S3204/S3584 series
Large area sensors for scintillation detection
S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window.
Features
Applications
l
Higher sensitivity and low dark current than conventional type
l
Sensitivity matching with BGO and CsI (TI) scintillators
l
High quantum efficiency QE=85 % (λ=540 nm)
l
Low capacitance
l
High-speed response
l
High stability
l
Good energy resolution
l
Scintillation detectors
l
Calorimeters
l
Hodoscopes
l
TOF counters
l
Air shower counters
l
Particle detectors, etc.
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline
Window
material
Epoxy resin
Window-less
Epoxy resin
Window-less
Epoxy resin
Window-less
Epoxy resin
Window-less
Active
area
(mm)
S3204-05
S3204-06
S3204-08
S3204-09
S3584-05
S3584-06
S3584-08
S3584-09
➀
18 × 18
0.3
0.5
28 × 28
0.3
100
100
100
150
-20 to +60
-20 to +80
Depletion
layer
thickness
(mm)
0.5
Reverse
voltage
V
R
Max.
150
Absolute maximum ratings
Power
Operating
dissipation temperature
P
Topr
(mW)
(°C)
Storage
temperature
Tstg
(°C)
➁
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
S p ectral
response
range
λ
(nm)
S3204-05
320 to 1120
S3204-06
S3204-08
320 to 1100
S3204-09
S3584-05
320 to 1120
S3584-06
S3584-08
320 to 1100
S3584-09
*1: V
R
=70 V
Peak
sensitivity
wavelength
λp
(nm)
980
960
980
960
Photo sensitivity
S
LSO
420 nm
(A/W) (A/W)
0.62
0.19
0.64
0.23
0.66
0.20
0.66
0.22
0.62
0.19
0.64
0.23
0.66
0.20
0.66
0.22
λ=λp
BGO
CsI(Tl)
480 nm 540 nm
(A/W)
(A/W)
0.25
0.3
0.32
0.39
0.3
0.36
0.33
0.41
0.25
0.3
0.32
0.39
0.3
0.36
0.33
0.41
Dark
S h ort
Cut-off
circuit current Temp. Frequency
I
D
current
fc
coefficient
V
R
= 10 0 V
V
R
= 10 0 V
Isc
of I
D
100
lx
Typ. Max. T
CID
-3 dB
(µA)
310
340
740
780
(nA) (nA) (tim es/° C) (MHz)
15
50
20
20 *
1.12
20 100
10 * 30 *
10
10 *
200
300 *
1.3 × 10
-13
Type No.
Ter minal
capacitance
Ct
NEP
f= 1 M H z V
R
=100 V
V
R
=100 V
(pF)
80
130 *
(W/Hz
1/2
)
1.2 × 10
-13
6 * 20 *
6.6 × 10
– 14
*
8.6 × 10
– 14
*
1
Si PIN photodiode
s
Spectral response
0.7
0.6
(Typ. Ta=25 ˚C)
S3204/S3584 series
s
Photo sensitivity temperature characteristic
+1.5
(Typ.)
s
Spectral response (without window)
0.7
0.6
(Typ. Ta=25 ˚C)
PHOTO SENSITIVITY (A/W)
S3204/S3584-08
0.5
0.4
0.3
0.2
0.1
0
200
PHOTO SENSITIVITY (A/W)
S3204/S3584-09
0.5
0.4
TEMPERATURE COEFFICIENT (%/˚C)
+1.0
S3204/S3584-06
0.3
0.2
0.1
0
200
+0.5
S3204/S3584-05
0
400
600
800
1000
1200
400
600
800
1000
1200
-0.5
200
400
600
800
1000
WAVELENGTH (nm)
KPINB0227EA
WAVELENGTH (nm)
WAVELENGTH (nm)
KPINB0264EA
KPINB0093EC
s
Dark current vs. reverse voltage
100 nA
S3204-05/-06
S3584-05/-06
(Typ. Ta=25 ˚C)
s
Dark current vs. ambient
temperature
10
µA
S3584-05/-06 (V
R
=100 V)
1
µA
S3204-05/-06 (V
R
=100 V)
s
Terminal capacitance vs. reverse voltage
(Typ.)
10 nF
(Typ. Ta=25 ˚C, f=1 MHz)
S3584-08/-09
TERMINAL CAPACITANCE
DARK CURRENT
100 nA
10 nA
S3584-08/-09 (V
R
=70 V)
1 nA
S3204-08/-09 (V
R
=70 V)
S3584-05/-06
1 nF
S3204-08/-09
DARK CURRENT
10 nA
S3204-08/-09
1 nA
S3584-08/-09
100 pF
S3204-05/-06
100 pA
10 pA
100 pA
0.1
1
10
100
1000
1 pA
-20
0
20
40
60
80
10 pF
0.1
1
10
100
1000
REVERSE VOLTAGE (V)
KPINB0228EB
AMBIENT TEMPERATURE (˚C)
KPINB0229EB
REVERSE VOLTAGE (V)
KPINB0230EB
s
Dimensional outlines (unit: mm)
➀
S3204 series
25.5
+0
-
0.6
3.4
18.0
➁
S3584 series
35.6
+0
-
0.8
3.4
28.0
25.5
+0
-
0.6
ACTIVE AREA
ACTIVE AREA
2.54
±
0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
1.75
WHITE CERAMIC
0.45
LEAD
1.75
Type No.
5.0
±
0.2
a
S3204-05/-06 1.0
S3204-08/-09 1.2
Type No.
a
S3584-05/-06 1.0
KPINA0040EB
5.0
±
0.2
10
WHITE CERAMIC
10
2.54
±
0.2
PHOTOSENSITIVE
SURFACE
a
a
35.6
+0
-
0.8
18.0
28.0
S3584-08/-09 1.2
KPINA0041EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1051E05
Mar. 2006 DN
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
