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1N5250BT

Description
ZENER DIODE,SINGLE, TWO TERMINAL,2.4V V(Z),5%,DO-35
CategoryDiscrete semiconductor    diode   
File Size82KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

1N5250BT Overview

ZENER DIODE,SINGLE, TWO TERMINAL,2.4V V(Z),5%,DO-35

1N5250BT Parametric

Parameter NameAttribute value
Parts packaging codeDO-41
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance25 Ω
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage20 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Base Number Matches1
Zeners (1N5221B - 1N5279B)
Zeners
1N5221B - 1N5279B
Absolute Maximum Ratings*
Symbol
P
D
T
STG
T
J
T
A
= 25°C unless otherwise noted
Tolerance = 5%
Parameter
Power Dissipation
Derate above 75°C
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10
seconds)
Value
500
4.0
-65 to +200
+ 200
+ 230
Units
mW
mW/°C
°C
°C
°C
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
**
Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Electrical Characteristics
Device
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235BT
1N5236BT
1N5237BT
1N5238BT
1N5239BT
1N5240BT
1N5241BT
1N5242BT
1N5243BT
1N5244BT
1N5245BT
T
A
= 25°C unless otherwise noted
V
Z
(V)
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
(Ω)
30
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
13
15
16
Z
Z
@
I
Z
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
Z
ZK
(Ω)
1,200
1,250
1,300
1,400
1,600
1,600
1,700
1,900
2,000
1,900
1,600
1,600
1,600
1,000
750
500
500
600
600
600
600
600
600
600
600
@
I
ZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
(µA)
µ
100
100
75
75
50
25
15
10
5.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
0.1
0.1
0.1
0.1
I
R
@
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
(%/°C)
°
- 0.085
- 0.085
- 0.080
- 0.080
- 0.075
- 0.07
- 0.065
- 0.06
+/- 0.055
+/- 0.03
+/- 0.03
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.080
0.082
T
C
2003
Fairchild Semiconductor Corporation
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