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LTC4444MPMS8E-5#TRPBF

Description
Gate DriverHigh Voltage Synchronous N-Channel MOSFET Driver
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size176KB,14 Pages
ManufacturerADI
Websitehttps://www.analog.com
Environmental Compliance
Download Datasheet Parametric Compare View All

LTC4444MPMS8E-5#TRPBF Overview

Gate DriverHigh Voltage Synchronous N-Channel MOSFET Driver

LTC4444MPMS8E-5#TRPBF Parametric

Parameter NameAttribute value
Brand NameAnalog Devices Inc
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionHTSSOP,
Contacts8
Manufacturer packaging code05-08-1662
Reach Compliance Codecompliant
Is SamacsysN
high side driverYES
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 codeS-PDSO-G8
JESD-609 codee3
length3 mm
Humidity sensitivity level1
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Nominal output peak current1.4 A
Package body materialPLASTIC/EPOXY
encapsulated codeHTSSOP
Package shapeSQUARE
Package formSMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.1 mm
Maximum supply voltage13.5 V
Minimum supply voltage4.5 V
Nominal supply voltage6 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
Disconnect time0.045 µs
connection time0.06 µs
width3 mm
Base Number Matches1
LTC4444-5
High Voltage Synchronous
N-Channel MOSFET Driver
FEATURES
n
n
n
n
n
n
n
n
n
n
n
n
n
n
DESCRIPTION
The LTC
®
4444-5 is a high frequency high voltage gate
driver that drives two N-channel MOSFETs in a synchro-
nous DC/DC converter with supply voltages up to 100V.
This powerful driver reduces switching losses in MOSFETs
with high gate capacitance.
The LTC4444-5 is configured for two supply-indepen-
dent inputs. The high side input logic signal is internally
level-shifted to the bootstrapped supply, which may func-
tion at up to 114V above ground.
The LTC4444-5 contains undervoltage lockout circuits that
disable the external MOSFETs when activated. Adaptive
shoot-through protection prevents both MOSFETs from
conducting simultaneously.
For a similar driver in this product family, please refer to
the chart below.
PARAMETER
LTC4444-5
LTC4446
LTC4444
Shoot-Through Protection
Yes
No
Yes
Absolute Max TS
100V
100V
100V
MOSFET Gate Drive
4.5V to 13.5V 7.2V to 13.5V 7.2V to 13.5V
4V
6.6V
6.6V
V
CC
UV
+
3.5V
6.15V
6.15V
V
CC
UV
Bootstrap Supply Voltage to 114V
Wide V
CC
Voltage: 4.5V to 13.5V
Adaptive Shoot-Through Protection
1.4A Peak Top Gate Pull-Up Current
1.75A Peak Bottom Gate Pull-Up Current
1.5Ω Top Gate Driver Pull-Down
0.75Ω Bottom Gate Driver Pull-Down
5ns Top Gate Fall Time Driving 1nF Load
8ns Top Gate Rise Time Driving 1nF Load
3ns Bottom Gate Fall Time Driving 1nF Load
6ns Bottom Gate Rise Time Driving 1nF Load
Drives Both High and Low Side N-Channel MOSFETs
Undervoltage Lockout
Thermally Enhanced 8-Pin MSOP Package
APPLICATIONS
n
n
n
n
Distributed Power Architectures
Automotive Power Supplies
High Density Power Modules
Telecommunication Systems
L,
LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and
No R
SENSE
is a trademark of Linear Technology Corporation. All other trademarks are the
property of their respective owners. Protected by U.S. Patents, including 6677210.
TYPICAL APPLICATION
High Input Voltage Buck Converter
V
CC
4.5V TO 13.5V
BOOST
PWM1
(FROM CONTROLLER IC)
PWM2
(FROM CONTROLLER IC)
TG
LTC4444-5
TS
TINP
BINP
GND
44445 TA01a
LTC4444-5 Driving a 1000pF Capacitive Load
BINP
5V/DIV
BG
5V/DIV
V
OUT
V
IN
100V
V
CC
TINP
5V/DIV
TG-TS
5V/DIV
20ns/DIV
44445 TA01b
BG
44445fc
1

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Description Gate DriverHigh Voltage Synchronous N-Channel MOSFET Driver Gate Drivers High-Voltage Synchronous N-Channel MOSFET Driver Gate Drivers High-Voltage Synchronous N-Channel MOSFET Driver Gate Drivers LTC4444-5 - High Voltage Synchronous N-Channel MOSFET Driver Gate Drivers LTC4444-5 - High Voltage Synchronous N-Channel MOSFET Driver Gate DriverHigh Voltage Synchronous N-Channel MOSFET Driver
Brand Name Analog Devices Inc Analog Devices Inc Analog Devices Inc - - Analog Devices Inc
Is it lead-free? Contains lead Contains lead Contains lead - - Contains lead
Is it Rohs certified? conform to conform to conform to - - conform to
package instruction HTSSOP, HTSSOP, HTSSOP, - - HTSSOP,
Contacts 8 8 8 - - 8
Manufacturer packaging code 05-08-1662 05-08-1662 05-08-1662 - - 05-08-1662
Reach Compliance Code compliant compliant compliant - - compliant
Is Samacsys N N N - - N
high side driver YES YES YES - - YES
Interface integrated circuit type HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER - - HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code S-PDSO-G8 S-PDSO-G8 S-PDSO-G8 - - S-PDSO-G8
JESD-609 code e3 e3 e3 - - e3
length 3 mm 3 mm 3 mm - - 3 mm
Number of functions 1 1 1 - - 1
Number of terminals 8 8 8 - - 8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
encapsulated code HTSSOP HTSSOP HTSSOP - - HTSSOP
Package shape SQUARE SQUARE SQUARE - - SQUARE
Package form SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH - - SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED - - 260
Certification status Not Qualified Not Qualified Not Qualified - - Not Qualified
Maximum seat height 1.1 mm 1.1 mm 1.1 mm - - 1.1 mm
Maximum supply voltage 13.5 V 13.5 V 13.5 V - - 13.5 V
Minimum supply voltage 4.5 V 4.5 V 4.5 V - - 4.5 V
Nominal supply voltage 6 V 6 V 6 V - - 6 V
surface mount YES YES YES - - YES
technology CMOS CMOS CMOS - - CMOS
Terminal surface Matte Tin (Sn) Matte Tin (Sn) MATTE TIN - - MATTE TIN (SN)
Terminal form GULL WING GULL WING GULL WING - - GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm - - 0.65 mm
Terminal location DUAL DUAL DUAL - - DUAL
Maximum time at peak reflow temperature 30 NOT SPECIFIED NOT SPECIFIED - - 30
Disconnect time 0.045 µs 0.045 µs 0.045 µs - - 0.045 µs
connection time 0.06 µs 0.06 µs 0.06 µs - - 0.06 µs
width 3 mm 3 mm 3 mm - - 3 mm
Base Number Matches 1 1 1 - - 1
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