Date:- 2 August 2012
Data Sheet Issue:- 2
Distributed Gate Thyristor
Types R0929LC10x to R0929LC12x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1000-1200
1000-1200
1000-1200
1100-1300
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I
2
t
I
2
t
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
sink
=55°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
I
2
t capacity for fusing t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
2
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
MAXIMUM
LIMITS
929
603
339
1893
1505
9.0
9.9
405×10
3
490×10
3
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A
2
s
A
2
s
A/µs
A/µs
V
W
W
V
°C
°C
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
7)
Rated V
DRM
.
Data Sheet R0929LC10x to R0929LC12x Issue 2
Page 1 of 12
August 2012
Distributed gate thyristor R0929LC10x to R0929LC12x
Characteristics
PARAMETER
V
TM
V
T0
r
T
Maximum peak on-state voltage
Threshold voltage
Slope resistance
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
0.9
0.4
150
85
70
2.2
-
-
-
-
-
340
MAX. TEST CONDITIONS
(Note 1)
2.04
1.549
0.350
-
70
70
3.0
300
1000
2.0
1.0
-
100
-
-
20
15
0.032
0.064
20
-
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=200V/µs
Double side cooled
Single side cooled
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V
V
D
=80% V
DRM
, linear ramp
Rated V
DRM
Rated V
RRM
T
j
=25°C
T
j
=25°C
V
D
=67% V
DRM
, I
T
=1500A, di/dt=60A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
V
D
=10V, I
T
=3A
I
TM
=1400A
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
(dv/dt)
cr
Critical rate of rise of off-state voltage
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gt
t
gd
Q
rr
Q
ra
I
rm
t
rr
t
q
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time (note 2)
15
R
thJK
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
-
-
10
-
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
2)
The required t
q
(specified with dV
dr
/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t
q
codes.
Data Sheet R0929LC10x to R0929LC12x Issue 2
Page 2 of 12
August 2012
Distributed gate thyristor R0929LC10x to R0929LC12x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
10
12
V
DRM
V
DSM
V
RRM
V
1000
1200
V
RSM
V
1100
1300
V
D
V
R
DC V
750
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other t
q
/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t
q
) and for the off-state voltage to reach full value (t
v
), i.e.
f
max
=
1
t
pulse
+
t
q
+
t
v
Data Sheet R0929LC10x to R0929LC12x Issue 2
Page 3 of 12
August 2012
Distributed gate thyristor R0929LC10x to R0929LC12x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let E
p
be the Energy per pulse for a given current and pulse width, in joules
Let R
th(J-Hs)
be the steady-state d.c. thermal resistance (junction to sink)
and T
SINK
be the heat sink temperature.
Then the average dissipation will be:
W
AV
=
E
P
⋅
f and T
SINK
(max .)
=
125
−
(
W
AV
⋅
R
th
(
J
−
Hs
)
)
11.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig. 1 below.
Fig. 1
(ii) Q
rr
is based on a 150µs integration time.
150
µ
s
i.e.
Q
rr
=
∫
i
0
rr
.
dt
(iii)
12.0 Reverse Recovery Loss
t
1
K Factor
=
t
2
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
T
SINK
(
new
)
=
T
SINK
(
original
)
−
E
⋅
(
k
+
f
⋅
R
th
(
J
−
Hs
)
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
th(J-Hs)
= d.c. thermal resistance (°C/W).
Data Sheet R0929LC10x to R0929LC12x Issue 2
Page 4 of 12
August 2012
Distributed gate thyristor R0929LC10x to R0929LC12x
The total dissipation is now given by:
W
(TOT)
=
W
(original)
+
E
⋅
f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
T
SINK
(
new
)
=
T
SINK
(
original
)
−
(
E
⋅
R
th
⋅
f
)
Where T
SINK (new)
is the required maximum heat sink temperature and
T
SINK (original)
is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
rm
) of 67% of the maximum grade. If a different grade is being used or V
rm
is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1-
Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R
2
=
4
⋅
V
r
C
S
⋅
di dt
Where: V
r
= Commutating source voltage
C
S
= Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet R0929LC10x to R0929LC12x Issue 2
Page 5 of 12
August 2012
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