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DF6D6M4N,LF

Description
ESD suppressor/TVS diode ESD protection diode 2A +/-20kV
CategoryCircuit protection    ESD suppressor/TVS diode   
File Size373KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF6D6M4N,LF Overview

ESD suppressor/TVS diode ESD protection diode 2A +/-20kV

DF6D6M4N,LF Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Product CategoryESD Suppressor/TVS Diode
seriesDF6D6M4N
Vesd - Electrostatic discharge voltage contact20 kV
Vesd - Electrostatic discharge voltage air gap20 kV
polarityBidirectional
Number of channels2 Channel
Termination typeSMD/SMT
Breakdown voltage5.6 V
Operating Voltage5.5 V
clamping voltage10 V
Ipp - peak pulse current2 A
Cd - 二极管电容 0.3 pF
Package/boxDFN-6
Maximum operating temperature+ 150 C
EncapsulationCut Tape
EncapsulationReel
Factory packaging quantity3000
DF6D6M4N
ESD Protection Diodes
Silicon Epitaxial Planar
DF6D6M4N
1. General
The DF6D6M4N is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device
interfaces and other applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF6D6M4N provides low dynamic resistance and superior protective
performance. Furthermore, the DF6D6M4N is a multibit device with a flow-through type design that is easy for
board layout and mounting.
2. Applications
Mobile Equipment
Smartphones
Tablets
Notebook PCs
Desktop PCs
Note:
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3. Features
(1)
(2)
(3)
(4)
(5)
Suitable for use with a 5 V signal line. (V
RWM
5.5 V)
Protects devices with its high ESD performance.
(V
ESD
=
±20
kV (Contact / Air) @IEC61000-4-2)
Low dynamic resistance protects semiconductor devices from static electricity and noise.
(R
DYN
= 0.8
(typ.))
Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(V
C
= 10 V@I
PP
= 2 A (typ.))
The DF6D6M4N is a multibit device with a flow-through type.
(1.25 mm
×
1.0 mm size (Nickname: DFN6))
4. Packaging
DFN6
Start of commercial production
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
2017-02
2018-02-02
Rev.2.0
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