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TSF20U60C C0

Description
Schottky Diodes and Rectifiers 20A 60V Dual Trench
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Schottky diode rectifier   
File Size244KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

TSF20U60C C0 Overview

Schottky Diodes and Rectifiers 20A 60V Dual Trench

TSF20U60C C0 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategorySchottky diodes and rectifiers
productSchottky Rectifiers
Installation styleThrough Hole
Package/boxITO-220AB-3
If - forward current20 A
Vrrm - Repetitive reverse voltage60 V
Vf - forward voltage0.63 V
Ifsm - Forward surge current200 A
ConfigurationDual Common Cathode
technologySi
Ir - 反向电流 300 uA
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
EncapsulationTube
Factory packaging quantity2000
Vr - 反向电压 60 V
unit weight1.700 g
creat by ART
TSF20U45C thru TSF20U60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case:
ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
I
F
= 10A
Maximum instantaneous forward voltage
per diode ( Note 1 )
I
F
= 20A
I
F
= 10A
I
F
= 20A
Maximum instantaneous reverse current per diode at
rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
T
J
= 25°C
V
F
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
R
R
θJC
T
J
T
STG
3
- 55 to +150
- 55 to +150
0.53
0.60
0.44
0.55
300
60
4
180
10000
0.54
0.63
0.48
0.61
μA
mA
°C/W
°C
°C
V
TSF20U45C
45
20
10
200
TSF20U60C
60
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Document Number: DS_D1412003
Version: G14

TSF20U60C C0 Related Products

TSF20U60C C0 TSF20U45C C0
Description Schottky Diodes and Rectifiers 20A 60V Dual Trench Schottky Diodes and Rectifiers 20A 45V Dual Trench
Maker Taiwan Semiconductor Taiwan Semiconductor
Product Category Schottky diodes and rectifiers Schottky diodes and rectifiers
product Schottky Rectifiers Schottky Rectifiers
Installation style Through Hole Through Hole
Package/box ITO-220AB-3 ITO-220AB-3
If - forward current 20 A 20 A
Vrrm - Repetitive reverse voltage 60 V 45 V
Vf - forward voltage 0.63 V 0.6 V
Ifsm - Forward surge current 200 A 180 A
Configuration Dual Common Cathode Dual Common Cathode
technology Si Si
Ir - 反向电流 300 uA 300 uA
Minimum operating temperature - 55 C - 55 C
Maximum operating temperature + 150 C + 150 C
Encapsulation Tube Tube
Factory packaging quantity 2000 2000
Vr - 反向电压 60 V 45 V
unit weight 1.700 g 1.700 g
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