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SK36B R4

Description
Schottky Diodes & Rectifiers 3.0 Amp 60 Volt 70 Amp IFSM
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Schottky diode rectifier   
File Size261KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SK36B R4 Overview

Schottky Diodes & Rectifiers 3.0 Amp 60 Volt 70 Amp IFSM

SK36B R4 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategorySchottky diodes and rectifiers
productSchottky Diodes
Installation styleSMD/SMT
Package/boxDO-214AA-2
If - forward current3 A
Vrrm - Repetitive reverse voltage60 V
Vf - forward voltage0.75 V
Ifsm - Forward surge current70 A
ConfigurationSingle
technologySi
Ir - 反向电流 500 uA
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
EncapsulationReel
high2.41 mm
length4.75 mm
range of working temperature- 55 C to + 150 C
width3.73 mm
Factory packaging quantity3000
unit weight93 mg
SK32B - SK320B
Taiwan Semiconductor
3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
Package
Configuration
VALUE
3
20 - 200
70
UNIT
A
V
A
DO-214AA (SMB)
Single Die
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix “H” means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.1 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Critical rate of rise of off-state voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
- 55 to +125
SYMBOL
SK
32B
SK
32B
20
14
20
SK SK SK SK SK
SK
SK
SK
33B 34B 35B 36B 39B 310B 315B 320B
SK
SK
SK
SK
SK
SK
SK
SK
33B 34B 35B 36B 39B 310B 315B 320B
30
40
50
60
90
100
150
200
21
30
28
40
35
50
42
60
3
70
10000
- 55 to +150
- 55 to +150
63
90
70
100
105
150
140
200
UNIT
V
V
V
A
A
V/μs
°C
°C
1
Version:N1705
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