EEWORLDEEWORLDEEWORLD

Part Number

Search

S29JL064H55BFI003

Description
4M X 16 FLASH 3V PROM, 70 ns, PDSO48
Categorystorage    storage   
File Size987KB,64 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Environmental Compliance
Download Datasheet Parametric View All

S29JL064H55BFI003 Overview

4M X 16 FLASH 3V PROM, 70 ns, PDSO48

S29JL064H55BFI003 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSPANSION
Parts packaging codeBGA
package instruction12 X 11 MM, LEAD FREE, FPBGA-63
Contacts63
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time55 ns
Spare memory width8
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B63
JESD-609 codee1
length12 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of functions1
Number of departments/size16,126
Number of terminals63
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA63,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.000005 A
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width11 mm
S29JL064H
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory
Distinctive Characteristics
Architectural Advantages
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
Flexible Bank architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
Manufactured on 0.13 µm process technology
SecSi™ (Secured Silicon) Sector: Extra 256 Byte
sector
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function.
Customer lockable:
One-time programmable only.
Once locked, data cannot be changed
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
Compatible with JEDEC standards
— Pinout and software compatible with single-power-
supply flash standard
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Cycling Endurance: 1 million cycles per sector
typical
Data Retention: 20 years typical
PRELIMINARY
Software Features
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation.
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
Hardware Features
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method to prevent any program or erase
operation within a sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
Package options
63-ball Fine Pitch BGA
48-pin TSOP
Performance Characteristics
High performance
— Access time as fast as 55 ns
— Program time: 4 µs/word typical using accelerated
programming function
Publication Number
S29JL064H
Revision
A
Amendment
1
Issue Date
March 26, 2004
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the
right to change or discontinue work on this proposed product without notice.
100 Solving thread synchronization problems
The critical section in the program InitializeCriticalSection(&(pHWHead->RegCritSec)); .... DeleteCriticalSection(&(pHWHead->RegCritSec)); .... .... EnterCriticalSection(&(pHWHead->RegCritSec)); .... ...
jameguom Embedded System
Share the four TI simulation books I read recently
They are all very good books. I feel that the blog post needs a certain level of accomplishment to be better....
天天1 Analogue and Mixed Signal
About wireless issues
How many Hz does a wireless transceiver need to reach to transmit video? How to make a wireless transceiver? Please help...
范凡 RF/Wirelessly
A problem with the STM8S library
When using stm8s_gpio.c to compile under Raisonance, the problem of not being able to find the stm8s_gpio.c file occurs. The reason is found in the following statement: void GPIO_WriteLow(GPIO_TypeDef...
mbwr stm32/stm8
How many IRQs should be added to the registry?
#define AT91C_ID_IRQ1 ((unsigned int) 30) // Advanced Interrupt Controller (IRQ1) I use IRQ1, which is defined as up. So how much IRQ should I add to the registry? 1E or 30? I tried 1E and it didn't w...
mtv0312 Embedded System
Knowledge of positive and negative film design in PCB design
This issue explains the design knowledge of positive and negative films in high-speed PCB design. 1. Negative film design requirements (1) It is recommended to select appropriate line width for the di...
板儿妹0517 PCB Design

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2558  2336  2126  1649  1337  52  48  43  34  27 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号