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1N5283-1

Description
0.22 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
Categorysemiconductor    Discrete semiconductor   
File Size29KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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0.22 mA, SILICON, CURRENT REGULATOR DIODE, DO-7

• 1N5283-1 THRU 1N5314-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/463
• CURRENT REGULATOR DIODES
• HIGH SOURCE IMPEDANCE
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
1N5283 thru 1N5314
and
1N5283-1 thru 1N5314-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ TL= +50°C, L = 3/8”
Power Derating: 4 mW / °C above +50°C
Peak Operating Voltage: 100 Volts
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
TYPE
NUMBER
NOM
1N5283
1N5284
1N5285
1N5286
1N5287
1N5288
1N5289
1N5290
1N5291
1N5292
1N5293
1N5294
1N5295
1N5296
1N5297
1N5298
1N5299
1N5300
1N5301
1N5302
1N5303
1N5304
1N5305
1N5306
1N5307
1N5308
1N5309
1N5310
1N5311
1N5312
1N5313
1N5314
0.22
0.24
0.27
0.30
0.33
0.39
0.43
0.47
0.56
0.62
0.68
0.75
0.82
0.91
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.80
2.00
2.20
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
REGULATOR CURRENT
l p (mA) @ VS = 25V
MIN
0.198
0.216
0.243
0.270
0.297
0.351
0.387
0.423
0.504
0.558
0.612
0.675
0.738
0.819
0.900
0.990
1.08
1.17
1.26
1.35
1.44
1.62
1.80
1.98
2.16
2.43
2.70
2.97
3.24
3.51
3.87
4.23
MAX
0.242
0.264
0.297
0.330
0.363
0.429
0.473
0.517
0.616
0.682
0.748
0.825
0.902
1.001
1.100
1.210
1.32
1.43
1.54
1.65
1.76
1.98
2.20
2.42
2.64
2.97
3.30
3.63
3.96
4.29
4.73
5.17
MINIMUM
DYNAMIC
IMPEDANCE
@VS = 25V
ZS (MΩ)
(Note 1)
25.0
19.0
14.0
9.0
6.6
4.10
3.30
2.70
1.90
1.55
1.35
1.15
1.00
0.880
0.800
0.700
0.640
0.580
0.540
0.510
0.475
0.420
0.395
0.370
0.345
0.320
0.300
0.280
0.265
0.255
0.245
0.235
MINIMUM
KNEE
IMPEDANCE
@VK = 6.0 V
ZK (MΩ)
(Note 2)
2.75
2.35
1.95
1.60
1.35
1.00
0.870
0.750
0.560
0.470
0.400
0.335
0.290
0.240
0.205
0.180
0.155
0.135
0.115
0.105
0.092
0.074
0.061
0.052
0.044
0.035
0.029
0.024
0.020
0.017
0.014
0.012
MAXIMUM
LIMITING
VOLTAGE
@ lL = 0.8 lp (min)
VL (VOLTS)
1.00
1.00
1.00
1.00
1.00
1.05
1.05
1.05
1.10
1.13
1.15
1.20
1.25
1.29
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.75
1.85
1.95
2.00
2.15
2.25
2.35
2.50
2.60
2.75
2.90
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 7 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250 ˚C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 25
˚C/W maximum
POLARITY:
Diode to be operated with
the banded (Cathode) end negative.
WEIGHT:
0.2 grams.
MOUNTING POSITION:
Any.
NOTE 1
NOTE 2
ZS is derived by superimposing A 90Hz RMS signal equal to 10% of VS on VS
ZK is derived by superimposing A 90Hz RMS signal equal to 10% of VK on VK
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
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