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S1MB

Description
1 A, 1000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size79KB,3 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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1 A, 1000 V, SILICON, SIGNAL DIODE

S1MB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWeitron Technology
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage1000 V
surface mountYES

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S1AB thru S1MB
Surface Mount Standard Recovery
Glass Passivated
REVERSE VOLTAGE
50 TO 1000 VOLTS
FORWARD CURRENT
1.0 AMPERE
Features:
*For Surface Mount Application
*Glass Passivated Chip
*Low Reverse Leakage Current
*Low Forward Voltage Drop And High Current Capability
*Plastic Meterial Has UL Flammability Classification 94V-0
Mechanical Data
*Case : Molded Plastic
*Polarity :Indicated by cathode band
*Weight : 0.003 Ounce ,0.093 grams
WEITRON
http://www.weitron.com.tw
S1AB thru S1MB
Maximum Ratings and Electrical Characteristics
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
Characteristics
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @TC=100 C
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous At 1.0A DC
Maximum DC Reverse Current @Tj=25 C
At Rated DC Blocking Voltage @Tj=125 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Symbol
S1AB S1BB S1DB S1GB S1JB S1KB S1MB Unit
VRRM
VRMS
VDC
IF(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
IFSM
VF
IR
CJ
R JL
TJ
TSTG
30
1.10
5.0
100
10
30
-65 to+150
-65 to+150
A
V
uA
PF
C/W
C
C
NOTES: 1.Measured at 1.0MHz applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to case.
WEITRON
S1AB thru S1MB
0.8
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1.0
I
O
, AVERAGE OUTPUT CURRENT (A)
10
1.0
0.6
0.4
0.1
0.2
R es is tive or
inductive load
0
40
0.01
0
0.4
0.8
1.2
1.6
60
80
100
120
140
160
180
TEMPERA
TURE (°C)
T
T
, TERMINAL
FIG1. Forward Current Derating Curve
.
V
F
, INSTANTANEOUS FORWARD VOL
TAGE (V)
FIG2. Typical Forward Characteristics
8.3ms S ingle half sine-wave
J E DE C Method
25
I R, INSTANTANEOUS REVERSE CURRENT(uA)
30
I
FSM
, PEAK FORWARD S URGE CURRENT (A)
1000
100
T
j
= 125°C
20
10
15
1.0
T
j
= 25°C
10
0.1
5
1
10
NUMBER OF CYCLES @ 60Hz
FIG3. Typical Forward Characteristics
100
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOL
TAGE (%)
FIG4. Typical Reverse Characteristics
WEITRON
http://www.weitron.com.tw

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S1MB S1AB S1BB S1DB S1GB S1KB S1JB
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Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
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