S1A-S1M
S1A - S1M
Features
•
•
Low profile package.
Glass passivated junction.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
1A
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
@ T
A
= 100°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
1B
100
1D
200
Value
1G
400
1.0
40
-55 to +150
-55 to +150
1J
600
1K
1M
800 1000
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient*
Value
1.4
85
Units
W
°C/W
*
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
V
F
t
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
1A
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
1B
1D
Device
1G
1.1
1.8
1.0
50
12
1J
1K
1M
Units
V
µs
µA
µA
pF
2001
Fairchild Semiconductor Corporation
S1A-S1M, Rev. C1. Aug 2006
S1A-S1M
General Purpose Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
2
Forward Current, I
F
[A]
1
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.315x0.315"
(8.0x8.0mm)
COPPER PAD AREAS
100
10
1
0.1
0
0
25
50
75
100
125
Lead Temperature [ºC]
150
175
0.01
0.6
0.8
Figure 1. Forward Current Derating Curve
1
1.2
1.4
Forward Voltage, V
F
[V]
1.6
1.8
Figure 2. Forward Voltage Characteristics
Peak Forward Surge Current, I
FSM
[A]
30
25
20
15
10
5
0
Reverse Current, I
R
[uA]
8.3ms Single Half Sine-Wave
JEDEC Method
100
10
T
J
= 125
º
C
1
T
J
= 75
º
C
0.1
T
J
= 25
º
C
0.01
1
2
5
10
20
Number of Cycles at 60Hz
50
100
0.001
0
20
40
60
80
100
Reverse Voltage, V
R
[V]
120
140
Figure 3. Non-Repetitive Surge Current
Figure 4. Reverse Current vs Reverse Voltage
Transient Thermal Impedance [ºC/W]
100
Total Capacitance, C
T
[pF]
50
T
J
= 25
º
C
f = 1.0 MHz
Vsig = 50mV p-p
100
50
Units Mounted On
20"x 20"(5.4mm
2
)+0.5mil
inches(0.013mm)
Thick Copper Land Areas
10
5
10
5
1
0.01
0.1
1
10
Reverse Voltage, V
R
[V]
100
1
0.01
0.1
1
10
Pulse Duration [s]
100
Figure 5. Total Capacitance
Figure 6. Thermal Impedance Characteristics
2001
Fairchild Semiconductor Corporation
S1A-S1M, Rev. C1. Aug 2006
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
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Not In Production
Rev. I20
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