BT137-800G0
4Q Triac
Rev.01 - 11 July 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended
for use in general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Least sensitive gate for highest noise immunity
High minimum I
GT
for guaranteed immunity to gate noise
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
•
•
General purpose motor controls
Lighting controls
Applications where only positive gate drive is avaliable
Applications where gate noise or interference may occur
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
T
j
I
TSM
Symbol
I
GT
Parameter
repetitive peak off-state
voltage
RMS on-state current
junction temperature
non-repetitive peak on-
state current
Parameter
gate trigger current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig.
5
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
200
-
-
V/μs
full sine wave; T
mb
≤ 102 °C;
Fig.
1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Min
10
10
10
10
Typ
-
-
-
-
Typ
-
-
-
-
Max
800
8
125
65
Max
50
50
50
100
Unit
V
A
°C
A
Unit
mA
mA
mA
mA
Static characteristics
WeEn Semiconductors
BT137-800G0
4Q Triac
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA137-800G0
TO-220AB
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78
BT137-800G0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
11 July 2018
2 / 13
WeEn Semiconductors
BT137-800G0
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig 4;
Fig 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state
current
t
p
= 10 ms; sine-wave pulse
I
G
= 0.1 A; T2+ G+
I
G
= 0.1 A; T2+ G-
I
G
= 0.1 A; T2- G-
I
G
= 0.2 A; T2- G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-
-
-40
-
Conditions
Min
-
-
-
-
-
-
Max
800
8
65
71
21
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/μs
A/μs
A/μs
A/μs
A
W
W
°C
°C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
≤ 102 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT137-800G0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
11 July 2018
3 / 13
WeEn Semiconductors
BT137-800G0
4Q Triac
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT137-800G0
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©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
11 July 2018
4 / 13
WeEn Semiconductors
BT137-800G0
4Q Triac
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT137-800G0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
11 July 2018
5 / 13
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