HybridPACK™DriveModule
FS820R08A6P2LB
FinalDataSheet
V3.0,2017-03-23
AutomotiveHighPower
FS820R08A6P2LB
HybridPACK™DriveModule
1Features/Description
HybridPACK™DrivemodulewithEDT2IGBTandDiode
T
T
T
V
CES
= 750V
I
C nom
= 820A / I
CRM
= 1640A
TypicalApplications
• AutomotiveApplications
• HybridElectricalVehicles(H)EV
• MotorDrives
• CommercialAgricultureVehicles
ElectricalFeatures
• Blockingvoltage750V
• LowV
CEsat
• LowSwitchingLosses
• LowQgandCres
• LowInductiveDesign
• T
vjop
=150°C
•
Short-time extended Operation Temperature
T
vjop
=175°C
MechanicalFeatures
• 4.2kVDC1secInsulation
• HighCreepageandClearanceDistances
• Compactdesign
• HighPowerDensity
• DirectCooledBasePlate
• GuidingelementsforPCBandcoolerassembly
• IntegratedNTCtemperaturesensor
• PressFITContactTechnology
• RoHScompliant
• UL94V0moduleframe
ProductName
FS820R08A6P2LB
Description
The HybridPACK
TM
Drive is a very compact
six-pack module (750V/820A) optimized for hybrid
and electric vehicles. The power module
implements the new EDT2 IGBT generation, which
is an automotive Micro-Pattern Trench-Field-Stop
cell design optimized for electric drive train
applications. The chipset has benchmark current
density combined with short circuit ruggedness and
increased blocking voltage for reliable inverter
operation under harsh environmental conditions.
The EDT2 IGBTs also show excellent light load
power losses, which helps to improve system
efficiency over a real driving cycle. The EDT2 IGBT
was optimized for applications with switching
frequencies in the range of 10 kHz.
The new HybridPACK
TM
Drive power module family
comes with mechanical guiding elements
supporting easy assembly processes for customers.
Furthermore, the press-fit pins for the signal
terminals avoid additional time consuming selective
solder processes, which provides cost savings on
system level and increases system reliability. The
direct cooled baseplate with PinFin structure in the
FS820R08A6P2LB product best utilizes the
implemented chipset and shows superior thermal
characteristics. Due to the high clearance &
creepage distances, the module family is also well
suited for increased system working voltages and
supports modular inverter approaches.
OrderingCode
SP001611366
Final Data Sheet
2
V3.0,2017-03-23
FS820R08A6P2LB
HybridPACK™DriveModule
2IGBT,Inverter
2.1MaximumRatedValues
Parameter
Collector-emittervoltage
Implementedcollectorcurrent
ContinuousDCcollectorcurrent
Repetitivepeakcollectorcurrent
Totalpowerdissipation
Gate-emitterpeakvoltage
T
F
= 80°C, T
vj max
= 175°C
t
P
= 1 ms
T
F
= 75°C, T
vj max
= 175°C
Conditions
T
vj
= 25°C
Symbol
V
CES
I
CN
I
C nom
I
CRM
P
tot
V
GES
min.
I
C
= 450 A, V
GE
= 15 V
I
C
= 450 A, V
GE
= 15 V
I
C
= 450 A, V
GE
= 15 V
I
C
= 820 A, V
GE
= 15 V
I
C
= 820 A, V
GE
= 15 V
Gatethresholdvoltage
Gatecharge
Internalgateresistor
Inputcapacitance
Outputcapacitance
Reversetransfercapacitance
Collector-emittercut-offcurrent
Gate-emitterleakagecurrent
Turn-ondelaytime,inductiveload
f = 1 MHz, V
CE
= 50 V, V
GE
= 0 V
f = 1 MHz, V
CE
= 50 V, V
GE
= 0 V
f = 1 MHz, V
CE
= 50 V, V
GE
= 0 V
V
CE
= 750 V, V
GE
= 0 V
V
CE
= 750 V, V
GE
= 0 V
V
CE
= 0 V, V
GE
= 20 V
I
C
= 450 A, V
CE
= 400 V
V
GE
= -8 V / +15 V
R
Gon
= 2.4
Ω
I
C
= 450 A, V
CE
= 400 V
V
GE
= -8 V / +15 V
R
Gon
= 2.4
Ω
I
C
= 450 A, V
CE
= 400 V
V
GE
= -8 V / +15 V
R
Goff
= 5.1
Ω
I
C
= 450 A, V
CE
= 400 V
V
GE
= -8 V / +15 V
R
Goff
= 5.1
Ω
I
C
= 450 A, V
CE
= 400 V, L
S
= 20 nH
V
GE
= -8 V / +15 V
R
Gon
= 2.4
Ω
di/dt (T
vj
25°C) = 5500 A/µs
di/dt (T
vj
150°C) = 5000 A/µs
I
C
= 450 A, V
CE
= 400 V, L
S
= 20 nH
V
GE
= -8 V / +15 V
R
Goff
= 5.1
Ω
dv/dt (T
vj
25°C) = 3100 V/µs
dv/dt (T
vj
150°C) = 2500 V/µs
V
GE
≤
15 V, V
CC
= 400 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
C
= 9.60 mA, V
CE
= V
GE
V
GE
= -8 V ... 15 V, V
CE
= 400V
T
vj
= 25°C
T
vj
= 25°C
T
vj
= 25°C
T
vj
= 25°C
T
vj
= 25°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 175°C
V
GEth
Q
G
R
Gint
C
ies
C
oes
C
res
I
CES
I
GES
t
d on
0.28
0.29
0.30
0.07
0.08
0.08
0.94
1.05
1.05
0.04
0.05
0.06
13.5
17.5
18.0
4.90
Value
750
820
450
1)
Unit
V
A
A
A
W
V
max.
1.35
V
1640
714
1)
+/-20
typ.
1.10
1.15
1.15
1.30
1.50
5.80
4,10
4.40
0.7
80.0
1.00
0.30
1.0
5
400
6.50
2.2CharacteristicValues
Collector-emittersaturationvoltage
V
CE sat
V
µC
Ω
nF
nF
nF
mA
nA
µs
Risetime,inductiveload
t
r
µs
Turn-offdelaytime,inductiveload
t
d off
µs
Falltime,inductiveload
t
f
µs
Turn-onenergylossperpulse
E
on
mJ
Turn-offenergylossperpulse
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
E
off
23.5
29.0
30.0
mJ
SCdata
Thermalresistance,junctiontocoolingfluid
Temperatureunderswitchingconditions
t
P
≤
6 µs, T
vj
= 25°C
t
P
≤
3 µs, T
vj
= 175°C
I
SC
R
thJF
T
vj op
-40
150
4800
3900
150
3)
175
A
perIGBT;∆V/∆t=10dm³/min,T
F
=75°C
t
op
continuous
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
0.120
2)
0.140
2)
K/W
°C
1)
2)
Verified by characterization / design not by test.
Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
3)
For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
Final Data Sheet
3
V3.0,2017-03-23
FS820R08A6P2LB
HybridPACK™DriveModule
3Diode,Inverter
3.1MaximumRatedValues
Parameter
Repetitivepeakreversevoltage
Implementedforwardcurrent
ContinuousDCforwardcurrent
Repetitivepeakforwardcurrent
I²t-value
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 175°C
Conditions
T
vj
= 25°C
Symbol
V
RRM
I
FN
I
F
I
FRM
I²t
min.
I
F
= 450 A, V
GE
= 0 V
I
F
= 450 A, V
GE
= 0 V
I
F
= 450 A, V
GE
= 0 V
I
F
= 820 A, V
GE
= 0 V
I
F
= 820 A, V
GE
= 0 V
Peakreverserecoverycurrent
I
F
= 450 A, - di
F
/dt = 5000 A/µs (T
vj
= 150°C)
V
R
= 400 V
V
GE
= -8 V
I
F
= 450 A, - di
F
/dt = 5000 A/µs (T
vj
= 150°C)
V
R
= 400 V
V
GE
= -8 V
I
F
= 450 A, - di
F
/dt = 5000 A/µs (T
vj
= 150°C)
V
R
= 400 V
V
GE
= -8 V
perdiode;∆V/∆t=10dm³/min,T
F
=75°C
t
op
continuous
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
T
vj
= 25°C
T
vj
= 150°C
T
vj
= 175°C
I
RM
Value
750
820
450
1)
Unit
V
A
A
A
A²s
A²s
max.
1.65
V
1640
19000
16000
typ.
1.45
1.30
1.25
1.70
1.60
250
350
370
20.0
40.0
45.0
7.00
13.0
15.0
150
3)
175
3.2CharacteristicValues
Forwardvoltage
V
F
A
Recoveredcharge
Q
r
µC
Reverserecoveryenergy
E
rec
R
thJF
T
vj op
-40
150
mJ
Thermalresistance,junctiontocoolingfluid
Temperatureunderswitchingconditions
0.175
2)
0.200
2)
K/W
°C
4NTC-Thermistor
Parameter
Ratedresistance
DeviationofR100
Powerdissipation
B-value
B-value
B-value
Conditions
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
Symbol
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
min.
typ.
Value
5.00
max.
Unit
kΩ
5
20.0
%
mW
K
K
K
5
3375
3411
3433
Specificationaccordingtothevalidapplicationnote.
1)
2)
Verified by characterization / design not by test.
Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
3)
For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
Final Data Sheet
4
V3.0,2017-03-23
FS820R08A6P2LB
HybridPACK™DriveModule
5Module
Parameter
Isolationtestvoltage
MaximumRMSmoduleterminalcurrent
Materialofmodulebaseplate
Internalisolation
Creepagedistance
Clearance
Comperativetrackingindex
Pressuredropincoolingcircuit
Maximumpressureincoolingcircuit
∆V/∆t
= 10.0 dm³/min; T
F
= 75°C
T
baseplate
< 40°C
T
baseplate
> 40°C
(relative pressure)
basicinsulation(class1,IEC61140)
terminaltoheatsink
terminaltoterminal
terminaltoheatsink
terminaltoterminal
Conditions
RMS, f = 0 Hz, t = 1 sec
T
F
= 75°C, T
Ct
= 105°C
Symbol
V
ISOL
I
tRMS
d
Creep
d
Clear
CTI
∆p
p
L
sCE
T
F
=25°C,perswitch
ScrewM4baseplatetoheatsink
ScrewEJOTDeltaPCBtoframe
R
CC'+EE'
T
stg
M
G
-40
1.80
0.45
8.0
0.75
125
min.
Value
4.2
500
1)
2)
Unit
kV
A
mm
mm
Cu+Ni
Al
2
O
33)
9.0
9.0
4.5
4.5
> 200
typ. max.
64
4)
2.5
2.0
mbar
bar
nH
mΩ
°C
Strayinductancemodule
Moduleleadresistance,terminals-chip
Storagetemperature
Mountingtorqueformodulmounting
Weight
2.00 2.20
Nm
0.50 0.55
5)
800
g
1)
2)
Continous, steady state. Verified by characterization / design not by test.
Ni plated Cu baseplate.
3)
Improved Al
2
O
3
ceramic.
4)
Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
5)
EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY
Final Data Sheet
5
V3.0,2017-03-23
京公网安备 11010802033920号
EEWORLD
