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BSC046N02KS G

Description
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size664KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC046N02KS G Overview

MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2

BSC046N02KS G Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxTDSON-8
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage20 V
Id-continuous drain current19 A
Rds On - drain-source on-resistance4.6 mOhms
Vgs - gate-source voltage12 V
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation2.8 W
ConfigurationSingle Quad Drain Triple Source
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high1.27 mm
length5.9 mm
seriesOptiMOS 2
Transistor type1 N-Channel
width5.15 mm
Fall time6 ns
Rise Time117 ns
Factory packaging quantity5000
Typical shutdown delay time34 ns
Typical switch-on delay time15 ns
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