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VBT4045BP-E3/4W

Description
Schottky Diodes and Rectifiers 40A 45V TrenchMOS
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Schottky diode rectifier   
File Size103KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

VBT4045BP-E3/4W Overview

Schottky Diodes and Rectifiers 40A 45V TrenchMOS

VBT4045BP-E3/4W Parametric

Parameter NameAttribute value
MakerVishay
Product CategorySchottky diodes and rectifiers
productSchottky Rectifiers
Installation styleSMD/SMT
Package/boxD2PAK (TO-263AB)
If - forward current40 A
Vrrm - Repetitive reverse voltage45 V
Vf - forward voltage0.51 V
Ifsm - Forward surge current240 A
ConfigurationSingle Dual Anode
technologySi
Ir - 反向电流 3000 uA
Minimum operating temperature- 40 C
Maximum operating temperature+ 150 C
EncapsulationTube
range of working temperature- 40 C to + 150 C
Factory packaging quantity1000
unit weight1.380 g
VBT4045BP-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low V
F
= 0.28 V at I
F
= 5 A
FEATURES
TMBS
®
D
2
PAK (TO-263AB)
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
1
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
MECHANICAL DATA
Case:
D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
40 A
45 V
240 A
0.51 V
150 °C
200 °C
D
2
PAK
(TO-263AB)
Single
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 40 A
T
OP
max. (AC mode)
T
J
max. (DC forward current)
Package
Circuit configuration
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction temperature range (AC mode)
Junction temperature in DC forward current without reverse bias, t
1 h
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
SYMBOL
V
RRM
I
F(DC)
(1)
VBT4045BP
45
40
240
-40 to +150
200
UNIT
V
A
A
°C
°C
I
FSM
T
OP
T
J
(1)
Revision: 02-Jul-2018
Document Number: 89442
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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