RMLV0816BGSD - 4S2
8Mb Advanced LPSRAM (512k word × 16bit / 1024k word x 8bit)
R10DS0253EJ0200
Rev.2.00
2015.06.26
Description
The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher
performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 52pin
TSOP
(II).
Features
Single 3V supply: 2.4V to 3.6V
Access time:
──
Power supply voltage from 2.7V to 3.6V: 45ns (max.)
──
Power supply voltage from 2.4V to 2.7V: 55ns (max.)
Current consumption:
──
Standby: 0.45µA (typ.)
Equal access and cycle times
Common data input and output
──
Three state output
Directly TTL compatible
──
All inputs and outputs
Battery backup operation
Part Name Information
Part Name
Power supply
2.7V to 3.6V
RMLV0816BGSD-4S2
2.4V to 2.7V
55 ns
Access time
45 ns
-40 ~ +85°C
10.79mm × 10.49mm 52pin plastic µTSOP (II)
Temperature
Range
Package
R10DS0253EJ0200 Rev.2.00
2015.06.26
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RMLV0816BGSD - 4S2
Pin Arrangement
A15
A14
A13
A12
A11
A10
A9
A8
NC
CS1#
WE#
NC
NC
Vcc
CS2
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
52
51
50
49
48
47
46
45
44
43
42
41
A16
BYTE#
UB#
Vss
LB#
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
NC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
NC
A0
52pin
TSOP
(II)
40
39
38
37
36
35
34
33
32
31
30
29
28
27
Pin Description
Pin name
V
CC
V
SS
A0 to A18
A-1 to A18
DQ0 to DQ15
CS1#
CS2
OE#
WE#
LB#
UB#
BYTE#
NC
Power supply
Ground
Address input (word mode)
Address input (byte mode)
Data input/output
Chip select 1
Chip select 2
Output enable
Write enable
Lower byte select
Upper byte select
Byte control mode enable
No connection
Function
R10DS0253EJ0200 Rev.2.00
2015.06.26
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RMLV0816BGSD - 4S2
Block Diagram
A
0
A
1
ADDRESS
BUFFER
ROW
DECODER
MEMORY ARRAY
512k-word x16-bit
or
1M-word x8-bit
DQ0
DQ1
DQ
BUFFER
DATA
A
18
DQ7
DQ8
SENSE / WRITE AMPLIFIER
SELECTOR
COLUMN DECODER
DQ
BUFFER
DQ9
CLOCK
CS2
CS1#
LB#
UB#
BYTE#
WE#
OE#
GENERATOR
DQ15
/ A
-1
x8 / x16
CONTROL
Vcc
Vss
R10DS0253EJ0200 Rev.2.00
2015.06.26
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RMLV0816BGSD - 4S2
Operation Table
CS1#
H
X
X
L
L
L
L
L
L
L
L
L
L
L
L
Note 1.
CS2
X
L
X
H
H
H
H
H
H
H
H
H
H
H
H
H: V
IH
L:V
IL
BYTE#
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
UB#
X
X
H
H
H
H
L
L
L
L
L
L
X
X
X
X: V
IH
or V
IL
LB#
X
X
H
L
L
L
H
H
H
L
L
L
X
X
X
WE#
X
X
X
L
H
H
L
H
H
L
H
H
L
H
H
OE#
X
X
X
X
L
H
X
L
H
X
L
H
X
L
H
DQ0~7
High-Z
High-Z
High-Z
Din
Dout
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
DQ8~14
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
High-Z
High-Z
High-Z
DQ15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
A-1
A-1
A-1
Operation
Stand-by
Stand-by
Stand-by
Write in lower byte
Read in lower byte
Output disable
Write in upper byte
Read in upper byte
Output disable
Word write
Word read
Output disable
Byte write
Byte read
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to V
SS
V
CC
Terminal voltage on any pin relative to V
SS
V
T
Power dissipation
P
T
Operation temperature
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Note 2. -3.0V for pulse
≤
30ns (full width at half maximum)
3. Maximum voltage is +4.6V.
Value
-0.5 to +4.6
-0.5
*2
to V
CC
+0.3
*3
0.7
-40 to +85
-65 to +150
-40 to +85
unit
V
V
W
°C
°C
°C
DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
2.4
0
2.0
2.2
-0.2
-0.2
Typ.
3.0
0
─
─
─
─
Max.
3.6
0
V
CC
+0.2
V
CC
+0.2
0.4
0.6
+85
Unit
V
V
V
V
V
V
°C
Test conditions
Note
Input high voltage
Input low voltage
Vcc=2.4V to 2.7V
Vcc=2.7V to 3.6V
Vcc=2.4V to 2.7V
Vcc=2.7V to 3.6V
4
4
Ambient temperature range
Ta
-40
─
Note 4. -3.0V for pulse
≤
30ns (full width at half maximum)
R10DS0253EJ0200 Rev.2.00
2015.06.26
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RMLV0816BGSD - 4S2
DC Characteristics
Parameter
Input leakage current
Output leakage current
Symbol
| I
LI
|
| I
LO
|
Average operating current
─
I
CC1
─
25
*5
30
mA
20
*5
Min.
─
─
Typ.
─
─
Max.
1
1
Unit
A
A
Test conditions
Vin = V
SS
to V
CC
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
CS1# = V
IH
or CS2 = V
IL
or OE# = V
IH
or WE# = V
IL
or LB# = UB# = V
IH
,
V
I/O
= V
SS
to V
CC
Cycle = 55ns, duty =100%, I
I/O
= 0mA,
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
CS1# = V
IL
, CS2 = V
IH
, Others = V
IH
/V
IL
Cycle = 45ns, duty =100%, I
I/O
= 0mA,
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
CS1# = V
IL
, CS2 = V
IH
, Others = V
IH
/V
IL
Cycle = 1s, duty =100%, I
I/O
= 0mA,
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
CS1#
≤
0.2V, CS2
≥
V
CC
-0.2V,
V
IH
≥
V
CC
-0.2V, V
IL
≤
0.2V
25
mA
I
CC2
─
1.5
*5
3
mA
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
CS2 = V
IL
, Others = V
SS
to V
CC
Vin = V
SS
to V
CC,
Standby current
*5
2
A
~+25°C
─
0.45
BYTE#
≥
Vcc -0.2V or
BYTE#
≤
0.2V
─
0.6
*6
4
A
~+40°C
(1) CS2
≤
0.2V or
I
SB1
(2) CS1#
≥
V
CC
-0.2V,
─
─
7
A
~+70°C
CS2
≥
V
CC
-0.2V or
(3) LB# = UB#
≥
V
CC
-0.2V,
─
─
10
A
~+85°C
CS1#
≤
0.2V, CS2
≥
V
CC
-0.2V
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
Output high voltage
2.4
─
─
V
I
OH
= -1mA
V
OH
Vcc≥2.7V
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
V
OH2
2.0
─
─
V
I
OH
= -0.1mA
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
Output low voltage
─
─
0.4
V
I
OL
= 2mA
V
OL
Vcc≥2.7V
BYTE#
≥
Vcc -0.2V or BYTE#
≤
0.2V
V
OL2
─
─
0.4
V
I
OL
= 0.1mA
Note 5. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
Note 6. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=40ºC), and not 100% tested.
I
SB
─
─
0.3
mA
Standby current
Capacitance
(Ta =25°C, f =1MHz)
Parameter
Symbol
Min.
Input capacitance
C in
─
Input / output capacitance
C
I/O
─
Note 7. This parameter is sampled and not 100% tested.
Typ.
─
─
Max.
8
10
Unit
pF
pF
Test conditions
Vin =0V
V
I/O
=0V
Note
7
7
R10DS0253EJ0200 Rev.2.00
2015.06.26
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