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DN2540N3-G P005

Description
MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size818KB,8 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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DN2540N3-G P005 Overview

MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92

DN2540N3-G P005 Parametric

Parameter NameAttribute value
MakerMicrochip
Product CategoryMOSFET
technologySi
Installation styleThrough Hole
Package/boxTO-92-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage400 V
Id-continuous drain current120 mA
Rds On - drain-source on-resistance25 Ohms
ConfigurationSingle
EncapsulationCut Tape
EncapsulationReel
Transistor type1 N-Channel
Factory packaging quantity2000
unit weight453.600 mg
Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN2540
General Description
Applications
Converters
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Normally-on switches
Solid state relays
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Part Number
DN2540N3-G
DN2540N3-G P002
Product Summary
Packing
1000/Bag
BV
DSX
/BV
DGX
400V
Package Option
TO-92
R
DS(ON)
(max)
I
DSS
(min)
25Ω
150mA
DN2540N3-G P003
DN2540N3-G P005
DN2540N3-G P013
DN2540N3-G P014
DN2540N5-G
DN2540N8-G
TO-220
TO-243AA (SOT-89)
TO-92
2000/Reel
Pin Configuration
DRAIN
50/Tube
2000/Reel
DRAIN
SOURCE
GATE
GATE
DRAIN
SOURCE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
TO-92
DRAIN
TO-220
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Typical Thermal Resistance
Package
TO-92
TO-220
TO-243AA (SOT-89)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
θ
ja
132
O
C/W
29
O
C/W
133
O
C/W
Doc.# DSFP-DN2540
B060313
Supertex inc.
www.supertex.com

DN2540N3-G P005 Related Products

DN2540N3-G P005 DN2540N3-G-P013 DN2540N5 DN2540N3-P002 DN2540N3-G P002 DN2540N3-P013 DN2540N3-G-P003
Description MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92 MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92 MOSFET 400V 25Ohm MOSFET 400V 25Ohm MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92 MOSFET 400V 25Ohm MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92
Product Category MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET
Configuration Single Single Single Single Single Single Single
Packaging - Reel Tube - Reel - Reel
Product Attribute - Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
Manufacturer - Microchip Microchip Microchip Microchip Microchip Microchip
RoHS - Details N N Details N Details
Technology - Si Si Si Si Si Si
Mounting Style - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case - TO-92-3 TO-220-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3
Number of Channels - 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel
Transistor Polarity - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage - 400 V 400 V 400 V 400 V 400 V 400 V
Id - Continuous Drain Current - 120 mA 500 mA 120 mA 120 mA 120 mA 120 mA
Rds On - Drain-Source Resistance - 25 Ohms 25 Ohms 25 Ohms 25 Ohms 25 Ohms 25 Ohms
Vgs - Gate-Source Voltage - 20 V 20 V 20 V 20 V 20 V 20 V
Minimum Operating Temperature - - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C
Maximum Operating Temperature - + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C
Channel Mode - Depletion Depletion Depletion Depletion Depletion Depletion
Height - 5.33 mm 9.02 mm 5.33 mm 5.33 mm 5.33 mm 5.33 mm
Length - 5.21 mm 10.67 mm 5.21 mm 5.21 mm 5.21 mm 5.21 mm
Product - MOSFET Small Signal - MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal
Transistor Type - 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel
Width - 4.19 mm 4.83 mm 4.19 mm 4.19 mm 4.19 mm 4.19 mm
Fall Time - 20 ns 20 ns 20 ns 20 ns 20 ns 20 ns
Pd - Power Dissipation - 1 W 15 W 1 W 1 W 1 W 1 W
Rise Time - 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns
Factory Pack Quantity - 2000 50 2000 2000 2000 2000
Typical Turn-Off Delay Time - 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns
Typical Turn-On Delay Time - 10 ns 10 ns 10 ns 10 ns 10 ns 10 ns
Unit Weight - 0.016000 oz 0.050717 oz 0.007760 oz 0.016000 oz 0.007760 oz 0.016000 oz
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