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BZV85 series
Voltage regulator diodes
Rev. 03 — 10 November 2009
Product data sheet
1. Product profile
1.1 General description
Medium-power voltage regulator diodes in small hermetically sealed leaded
SOD66 (DO-41) glass packages.
The diodes are available in the normalized E24 approximately
±5
% tolerance range.
The series consists of 33 types with nominal working voltages from 3.6 V to 75 V.
1.2 Features
I
Total power dissipation: max. 1.3 W
I
Working voltage range:
nominal 3.3 V to 75 V (E24 range)
I
Small hermetically sealed glass
package
I
Tolerance series: approximately
±5
%
I
Non-repetitive peak reverse power
dissipation: max. 60 W
1.3 Applications
I
Stabilization purposes
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
T
amb
= 25
°C;
lead length 10 mm
P
ZSM
[1]
[2]
[3]
[1]
Conditions
I
F
= 50 mA
Min
-
-
-
-
Typ
-
-
-
-
Max
1
1
1.3
60
Unit
V
W
W
W
[2]
non-repetitive peak reverse
power dissipation
square wave;
t
p
= 100
µs
[3]
Device mounted on a Printed-Circuit Board (PCB) with 1 cm
2
copper area per lead.
If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
T
j
= 25
°C
prior to surge
NXP Semiconductors
BZV85 series
Voltage regulator diodes
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
k
a
Graphic symbol
1
2
006aaa152
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BZV85 series
[1]
[1]
Type number
Description
hermetically sealed glass package; axial leaded;
2 leads
Version
SOD66
-
The series consists of 33 types with nominal working voltages from 3.3 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking code
The diodes are type branded.
Type number
BZV85 series
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
2 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
square wave;
t
p
= 100
µs
half sine wave;
t
p
= 10 ms
P
tot
total power dissipation
T
amb
= 25
°C;
lead length 10 m
m
P
ZSM
T
j
T
stg
[1]
[2]
[3]
[2]
[1]
Conditions
Min
-
-
-
Max
500
see
Table 8
see
Table 8
1
Unit
mA
[1]
-
W
[3]
-
-
-
−65
1.3
60
200
+200
W
W
°C
°C
non-repetitive peak reverse
power dissipation
junction temperature
storage temperature
square wave;
t
p
= 100
µs
[1]
T
j
= 25
°C
prior to surge
Device mounted on a PCB with 1 cm
2
copper area per lead.
If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
3 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
6. Thermal characteristics
Table 6.
Symbol
R
th(j-t)
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to tie-point
thermal resistance from
junction to ambient
Conditions
lead length 4 mm
lead length 10 mm
[1]
Min
-
-
Typ
-
-
Max
110
175
Unit
K/W
K/W
Device mounted on a PCB with 1 cm
2
copper area per lead.
10
3
R
th(j-t)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
10
0.10
0.05
006aab844
0.02
0.01
0
1
10
−2
10
−1
1
10
10
2
10
3
t
p
(ms)
10
4
Fig 1.
Thermal resistance from junction to tie-point as a function of pulse duration;
lead length 4 mm
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 50 mA
Min
-
Typ
-
Max
1
Unit
V
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
4 of 10
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