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RS1J R3G

Description
Rectifier 1A, 600V, GP FR SMD RECTIFIER
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    rectifier   
File Size377KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

RS1J R3G Overview

Rectifier 1A, 600V, GP FR SMD RECTIFIER

RS1J R3G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryRectifier
Installation styleSMD/SMT
Package/boxDO-214AC-2
Vr - 反向电压 600 V
If - forward current1 A
typeFast Recovery Rectifiers
ConfigurationSingle
Vf - forward voltage1.3 V
Maximum surge current30 A
Ir - 反向电流 5 uA
Recovery Time250 ns
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
EncapsulationCut Tape
EncapsulationReel
productRectifiers
Factory packaging quantity1800
unit weight60 mg
RS1A - RS1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Surface Mount Fast Recovery Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Fast switching for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
R
θJA
T
J
T
STG
150
10
32
105
- 55 to +150
- 55 to +150
RS
1A
50
35
50
RS
1B
100
70
100
RS
1D
200
140
200
RS
1G
400
280
400
1
30
1.3
5
50
250
500
RS
1J
600
420
600
RS
1K
800
560
800
RS
1M
1000
700
1000
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1411069
Version: K15

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