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BZT52B3V3 RH

Description
Zener diode 3.3 Volt 410mW 2%
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Zener diode   
File Size203KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BZT52B3V3 RH Overview

Zener diode 3.3 Volt 410mW 2%

BZT52B3V3 RH Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryZener diode
Vz - Zener voltage3.3 V
Installation styleSMD/SMT
Package/boxSOD-123F-2
Pd-power dissipation500 mW
voltage tolerance2 %
Zener current4.5 uA
Zz - Zener impedance95 Ohms
Minimum operating temperature- 65 C
Maximum operating temperature+ 150 C
ConfigurationSingle
Test current5 mA
EncapsulationCut Tape
EncapsulationReel
seriesBZT52B
high1.15 mm
length2.7 mm
width1.7 mm
Ir - 反向电流 4.5 uA
Factory packaging quantity3000
Vf - forward voltage1 V
unit weight8.850 mg
BZT52B2V4 - BZT52B75
Taiwan Semiconductor
Small Signal Product
500mW, 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface mount device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- V
Z
Tolerance Selection of ±2%
- Matte tin (Sn) lead finish with Nickel (Ni) under plate
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 8.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward voltage
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
(Note 1)
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
T
STG
VALUE
1
500
350
150
- 65 to +150
UNIT
V
mW
°C/W
°C
°C
Notes: 1. Valid provided that electrodes are kept at ambient temperature
ZENER I vs. V CHARACTERISTICS
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1405026
Version: F15
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