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RGF1J/19-

Description
Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Diode - general, power switch   
File Size96KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

RGF1J/19- Overview

Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM

RGF1J/19- Parametric

Parameter NameAttribute value
MakerVishay
Product CategoryDiodes - General Purpose, Power, Switching
RoHSN
productSwitching Diodes
Installation styleSMD/SMT
Package/boxDO-214BA-2
Peak reverse voltage600 V
Maximum surge current30 A
If - forward current1 A
ConfigurationSingle
Recovery Time250 ns
Vf - forward voltage1.3 V
Ir - 反向电流 5 uA
Minimum operating temperature- 65 C
Maximum operating temperature+ 175 C
EncapsulationCut Tape
EncapsulationReel
high2.74 mm
length4.75 mm
typeSwitching Diode
width2.9 mm
Factory packaging quantity6500
unit weight104 mg
RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
Superectifier
®
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified available
GF1 (DO-214BA)
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
max.
Package
Diode variations
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
30 A
1.3 V
150 ns, 250 ns, 500 ns
175 °C
GF1 (DO-214BA)
Single
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case:
GF1 (DO-214BA), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
two bands indicate cathode end - 1
st
band
denotes device type and 2
nd
band denotes repetitive peak
reverse voltage rating
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
= 120 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle
average T
A
= 55 °C
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
SYMBOL
RGF1A
RA
50
35
50
RGF1B
RB
100
70
100
RGF1D
RD
200
140
200
RGF1G
RG
400
280
400
1.0
30
50
-65 to +175
RGF1J
RJ
600
420
600
RGF1K RGF1M
RK
800
560
800
RM
1000
700
1000
V
V
V
A
A
μA
°C
UNIT
Revision: 25-Aug-17
Document Number: 88697
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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