EEWORLDEEWORLDEEWORLD

Part Number

Search

CY7C1371KV33-100AXCT

Description
Static Random Access Memories Sync Static Random Access Memories
Categorysemiconductor    Memory IC    Static random access memory   
File Size525KB,25 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CY7C1371KV33-100AXCT Online Shopping

Suppliers Part Number Price MOQ In stock  
CY7C1371KV33-100AXCT - - View Buy Now

CY7C1371KV33-100AXCT Overview

Static Random Access Memories Sync Static Random Access Memories

CY7C1371KV33-100AXCT Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product Categorystatic random access memory
storage18 Mbit
organize512 k x 36
interview time8.5 ns
maximum clock frequency100 MHz
Interface TypeParallel
Supply voltage - max.3.6 V
Supply voltage - min.3.135 V
Minimum operating temperature0 C
Maximum operating temperature+ 70 C
Installation styleSMD/SMT
Package/boxTQFP-100
EncapsulationReel
storage typeVolatile
typeSynchronous
Factory packaging quantity750
CY7C1371KV33
CY7C1371KVE33
CY7C1373KV33
18-Mbit (512K × 36/1M × 18)
Flow-Through SRAM
with NoBL™ Architecture (With ECC)
18-Mbit (512K × 36/1M × 18) Flow-through SRAM with NoBL™ Architecture (With ECC)
Features
Functional Description
The CY7C1371KV33/CY7C1371KVE33/CY7C1373KV33 are
3.3 V, 512K × 36/1M × 18 synchronous flow through burst SRAM
designed specifically to support unlimited true back-to-back
read/write operations with no wait state insertion. The
CY7C1371KV33/CY7C1371KVE33/CY7C1373KV33
are
equipped with the advanced No Bus Latency (NoBL) logic
required to enable consecutive read/write operations with data
being transferred on every clock cycle. This feature dramatically
improves the throughput of data through the SRAM, especially
in systems that require frequent write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
clock enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133 MHz device).
Write operations are controlled by the two or four byte write
select (BW
X
) and a write enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. To avoid bus contention, the
output drivers are synchronously tristated during the data portion
of a write sequence.
No Bus Latency (NoBL) architecture eliminates dead cycles
between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data is transferred on every clock
Pin-compatible and functionally equivalent to ZBT™ devices
Internally self-timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte write capability
3.3 V/2.5 V I/O power supply (V
DDQ
)
Fast clock-to-output times
6.5 ns (for 133 MHz device)
Clock enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous output enable
Available in JEDEC-standard Pb-free 100-pin TQFP packages
Three chip enables for simple depth expansion
Automatic power-down feature available using ZZ mode or CE
deselect
Burst capability – linear or interleaved burst order
Low standby power
On chip Error Correction Code (ECC) to reduce Soft Error Rate
(SER)
Selection Guide
Description
Maximum access time
Maximum operating current
× 18
× 36
133 MHz
6.5
129
149
100 MHz
8.5
114
134
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document Number: 001-97852 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 8, 2018

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1171  2034  1732  1962  1419  24  41  35  40  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号