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NSVBAS16TT1G

Description
Diodes - General Purpose, Power, Switching SWITCHING DIODE 75 V
CategoryDiscrete semiconductor    diode   
File Size98KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NSVBAS16TT1G Overview

Diodes - General Purpose, Power, Switching SWITCHING DIODE 75 V

NSVBAS16TT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionR-PDSO-G3
Manufacturer packaging code463-01
Reach Compliance Codecompliant
Factory Lead Time8 weeks
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.5 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.36 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse current1 µA
Maximum reverse recovery time0.006 µs
Reverse test voltage100 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
BAS16TT1G
Silicon Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
ms
Symbol
V
R
I
F
I
FM(surge)
Max
100
200
500
Unit
V
mA
mA
3
CATHODE
1
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
555
Unit
mW
mW/°C
°C/W
XX
M
MARKING
DIAGRAM
3
1
2
CASE 463
SOT−416
STYLE 2
1
= Specific Device Code
= Date Code
= Pb−Free Package
A6
M
G
G
G
360
2.9
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BAS16TT1G
Package
SOT−416
(Pb−Free)
Shipping
3000 / Tape & Reel
R
qJA
T
J
, T
stg
345
−55
to
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
×
1.0 Inch Pad
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
Rev. 4
1
Publication Order Number:
BAS16TT1/D

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