Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
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Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
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-
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NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 400 mW
•
Small plastic package suitable for surface mounted
design
•
Wide variety of voltage ranges: nominal 2.4 to 36 V
(E24 range)
•
Tolerance approximately
±2%.
APPLICATIONS
•
General voltage regulation.
DESCRIPTION
Low-power general purpose voltage regulator diodes in a
small plastic SMD SOD323 (SC-76) package.
Fig.1
handbook, halfpage
PDZ-B series
PINNING
PIN
1
2
1
Top view
The marking bar indicates the cathode.
Simplified outline (SOD323; SC-76) and
symbol.
MARKING
TYPE
NUMBER
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
MARKING
CODE
Z0
Z1
Z2
Z3
Z4
Z5
Z6
Z7
TYPE
NUMBER
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
MARKING
CODE
Z8
Z9
ZA
ZB
ZC
ZD
ZE
ZF
TYPE
NUMBER
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
;
;
MARKING
CODE
ZG
ZH
ZJ
ZK
ZL
ZM
ZN
ZP
DESCRIPTION
cathode
anode
2
MAM387
TYPE
NUMBER
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
MARKING
CODE
ZQ
ZR
ZS
ZT
ZU
ORDERING INFORMATION
TYPE
NUMBER
PDZ2.4B to
PDZ36B
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
2004 Mar 22
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board measuring 11
×
25
×
1.6 mm.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-s)
R
th(j-a)
Note
1. Device mounted on a printed-circuit board measuring 11
×
25
×
1.6 mm.
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
note 1
CONDITIONS
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1;
see Fig.2
−
−65
−
CONDITIONS
−
MIN.
PDZ-B series
MAX.
200
see Table 2
400
+150
150
UNIT
mA
mW
°C
°C
VALUE
130
340
UNIT
K/W
K/W
2004 Mar 22
3
Embedded System
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