RS1MB datasheet, PDF - EEWORLD Datasheet

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RS1MB: Description1 A, 1000 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size150KB，3 Pages; ManufacturerWeitron Technology; Websitehttp://weitron.com.tw/

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RS1MB Overview

1 A, 1000 V, SILICON, SIGNAL DIODE

RS1MB Parametric

Parameter Name	Attribute value
Maker	Weitron Technology
Parts packaging code	DO-214AA
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	0.5 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL

RS1MB Preview

RS1AB thru RS1MB

Surface Mount Fast Recovery Rectifiers

P b

Lead(Pb)-Free

REVERSE VOLTAGE

50 TO 1000 VOLTS

FORWARD CURRENT

1.0 AMPERE

Features:

* For Surface Mount Application

* Glass Passivated Chip

* Low Reverse Leakage Current

* Low Forward Voltage Drop And High Current Capability

* Plastic Meterial Has UL Flammability Classiﬁcation 94V-0

Mechanical Data:

* Case : Molded Plastic

* Polarity :Indicated by cathode band

* Weight : 0.003 Ounce ,0.093 grams

SMB(DO-214AA)

SMB Outline Dimension

Dim

Unit:mm

SMB

Min

3.30

4.06

1.96

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.80

2.21

0.31

5.59

0.20

1.52

2.62

http://www.weitron.com.tw

WEITRON

1/3

11-May-06

RS1AB thru RS1MB

Maximum Ratings and Electrical Characteristics

Rating 25 C AmbientTemperature Unless Otherwise Speciﬁed.

Single Phase HalfWave, 60Hz , Resistive or Inductive Load.

For Capacitive Load, Derate Current by 20%.

Characteristics

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectiﬁed Current

.375”(9.5mm) lead Length at Ta = 55°C

Peak Forward Surge Current,8.3 ms Single Half

Sine-WaveSuperimposed on Rated Load

Maximum Instantaneous At 1.0A DC

Maximum DC Reverse Current @Ta = 25°C

At Rated DC BlockingVoltage @Ta = 100°C

Max Reverse Recovery Time

Typical Junction Capacitance

OperatingTemperature Range

StorageTemperature Range

Symbol

RS1AB RS1BB RS1DB RS1GB RS1JB RS1KB RS1MB

Unit

RRM

RMS

F(AV)

FSM

STG

100

200

140

200

400

280

400

1.0

1.3

5.0

100

600

420

600

800

560

800

1000

700

1000

μA

150

+150

250

500

°C

-65 to +150

NOTES: 1.Measured at 1.0MHz applied reverse voltage of 4.0V DC.

2.Thermal Resistance Junction to case.

WEITRON

http://www.weitron.com.tw

2/3

11-May-06

RS1AB thru RS1MB

AVERAGE FORWARD CURRENT

AMPERES

1.0

0.8

0.6

0.4

0.2

PEAK FORWARD SURGE CURRENT,

AMPERES

Pulse Width 8.3ms

Single Half-Sine-Wave

(JEDEC METHOD)

SINGLE PHASE HALF WAVE 60Hz

RESISTIVE OR INDUCTIVE LOAD

100

125

150

175

100

LEAD TEMPERATURE , C

NUMBER OF CYCLES AT 60Hz

FIG.1 Forward Current Derating Curve

FIG.2 Maximum Non-Pepetitive Surge Current

1000

INSTANTANEOUS FORWARD CURRENT, (A)

INSTANTANEOUS

REVERSE CURRENT, (uA)

100

= 100 C

1.0

= 25 C

1.0

= 25 C

0.1

.01

0.2

0.4

0.6

0.8

1.0

PULSEWIDTH:300us

0.01

1.8

100

120

140

1.2

1.4

1.6

INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG.3 Typcial Forward Characteristics

FIG.4 Typical Reverse Characteristics

WEITRON

http://www.weitron.com.tw

3/3

11-May-06

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RS1MB Related Products

	RS1MB	RS1BB	RS1AB	RS1DB	RS1GB	RS1KB	RS1JB
Description	1 A, 1000 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE
Parts packaging code	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA
package instruction	R-PDSO-C2	LEAD FREE, PLASTIC, SMB, 2 PIN	LEAD FREE, PLASTIC, SMB, 2 PIN	LEAD FREE, PLASTIC, SMB, 2 PIN	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Contacts	2	2	2	2	2	2	2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Number of components	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	1000 V	600 V	1000 V	200 V	800 V	800 V	600 V
Maximum reverse recovery time	0.5 µs	0.25 µs	0.5 µs	0.15 µs	0.5 µs	0.5 µs	0.25 µs
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	Weitron Technology	Weitron Technology	Weitron Technology	Weitron Technology	-	-	Weitron Technology

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