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RR1100B

Description
0.08 A, 11000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size52KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet View All

RR1100B Overview

0.08 A, 11000 V, SILICON, SIGNAL DIODE

EF to RR
HIGH VOLTAGE HIGH CURRENT MINIATURE
RECTIFIERS
SMALL SIZE MOLDED PACKAGES
PRV 1,000 TO12,000 VOLTS
FAST RECOVERY(R_ SERIES)
AVALANCHE CHARACTERISTICS
EDI
Type No.
Peak
ReverseVoltage
PRV(Volts )
EF100
EF150
EF200
EG200
EG250
EG300
EH300
EH350
EH400
EK450
EK500
EK600
EM700
EM800
EP900
EP1000
ER1100
ER1200
RF160B
RF200B
RG300B
RK300B
RK400B
RK500B
RK600B
RM700B
RM800B
RP900B
RP1000B
RR1100B
RR1200B
RF160A
RF200A
RG300A
RK300A
RK400A
RK500A
RK600A
RM800A
RP1000A
RR1200A
1,000
1,500
2,000
2,000
2,500
3,000
3,000
3,500
4,000
4,500
5,000
6,000
7,000
8,000
9,000
10,000
11,000
12,000
1,600
2,000
3,000
3,000
4,000
5,000
6,000
7,000
8,000
9,000
10,000
11,000
12,000
1,600
2,000
3,000
3,000
4,000
5,000
6,000
8,000
10,000
12,000
Max.Fwd Voltage
Max. P
eak Surge
Avg.Fwd.Current
o
o
Drop at 25 C and I
O
Cureent, I
FSM
I
O
at 50 C
(mA)
V
F
(Volts)
(8.3 ms) (A
mps)
FIG.1
FIG.2
STANDARD RECOVERY
600
2.0
35
600
2.0
35
600
2.0
35
400
3.0
30
400
3.0
30
400
3.0
30
300
4.0
25
300
4.0
25
300
4.0
25
200
6.0
15
200
6.0
15
200
6.0
15
175
8.0
12
175
8.0
12
150
10.0
10
150
10.0
10
100
12.0
8
100
12.0
8
250 NANOSECOND RECOVERY(F IG.4)
500
2.6
25
500
2.6
25
350
3.9
20
150
7.8
10
150
7.8
10
150
7.8
10
150
7.8
10
125
10.4
8
125
10.4
8
100
13.0
7
100
13.0
7
80
15.6
6
80
15.6
6
150 NANOSECOND RECOVERY(F IG.4)
500
2.6
25
500
2.6
25
350
3.9
20
150
7.8
10
150
7.8
10
150
7.8
10
150
7.8
10
125
10.4
8
13.0
100
7
80
15.6
6
Repetitive Peak
Forward Current
I
FRM
(Amps)
8.0
8.0
8.0
6.0
6.0
6.0
5.0
5.0
5.0
3.0
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
8.0
8.0
6.0
3.0
3.0
3.0
3.0
2.0
2.0
1.5
1.5
1.0
1.0
8.0
8.0
6.0
3.0
3.0
3.0
3.0
2.0
1.5
1.0
EDI reserves the right to change these specifications at any time without notice
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