ESD5V0SxUS
Multi-Channel TVS Diode Array
•
ESD / transient protection of
data and power lines
in 3.3 V / 5 V application according to:
IEC61000-4-2 (ESD):
±
30 KV (contact)
IEC61000-4-4 (EFT): 80 A (5/50 ns)
IEC61000-4-5 (Surge): 10 A (8/20 µs)
•
Working voltage: 5 V (5.3 V max.)
•
Low clamping voltage
•
Low reverse current < 5 µA
•
Pb-free (RoHS compliant) package
Applications
•
Uni or bi-directional operation possible
(see application example page 5)
•
Mobile communication
•
Consumer products (STB, MP3, DVD, DSC...)
•
LCD displays, camera
•
Notebooks and desktop computers, peripherals
ESD5V0S4US
6
5
4
ESD5V0S5US
6
5
4
ESD5V0S5US E6727
180° rotated in reel
1
6
2
5
3
Type
ESD5V0S4US
ESD5V0S5US
ESD5V3S5US E6727*
* Preliminary data
Package
SOT363
SOT363
SOT363
Configuration
4 lines, uni-directional
5 lines, uni-directional
5 lines, uni-directional
1
4
1
2
3
1
2
3
Marking
E4s
E5s
on request
2011-06-17
ESD5V0SxUS
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
V
ESD
I
pp
P
pk
T
op
T
stg
Value
Unit
ESD contact discharge per diode
1)
Peak pulse current (
t
p
= 8 / 20 µs) per diode
2)
Peak pulse power (
t
p
= 8 / 20 µs) per diode
Operating temperature range
Storage temperature
30
10
130
-55...125
-65...150
kV
A
W
°C
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Characteristics
-
Symbol
min.
Values
typ.
max.
Unit
Reverse working voltage
Breakdown voltage
I
(BR)
= 1 mA
V
RWM
V
(BR)
I
R
-
5.7
5
6.7
5.3
7.7
V
Reverse current
V
R
= 3.3 V
V
R
= 5 V
µA
-
-
-
-
7
10.5
1
3.5
70
35
1
5
V
-
-
9
13
3
6
pF
-
-
90
55
Clamping voltage (positive transients)
I
PP
= 1 A,
t
p
= 8/20 µs
2)
I
PP
= 10 A,
t
p
= 8/20 µs
2)
V
CL
Forward clamping voltage (negative transients)
I
PP
= 1 A,
t
p
= 8/20 µs
2)
I
PP
= 10 A,
t
p
= 8/20 µs
2)
V
FC
-
-
C
T
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
V
R
= 5 V,
f
= 1 MHz
1
V
2
I
ESD
according to IEC61000-4-2
pp
according to IEC61000-4-5
2
2011-06-17
ESD5V0SxUS
Power derating curve
P
pk
=
ƒ
(
T
A
)
Clamping voltage
,
V
cl
=
ƒ
(
I
pp
)
t
p
= 8 / 20 µs (positive transients)
13
V
11
10
80
70
60
50
40
30
20
10
0
0
25
50
75
100
°C
110
%
90
P
pk
or
I
pp
9
V
cl
8
7
6
5
4
3
2
1
150
0
0
1
2
3
4
5
6
7
8
A
10
T
A
I
pp
Forward clamping voltage
V
FC
=
ƒ
(
I
pp
)
t
p
= 8 / 20 µs (negative transients)
13
V
11
10
Reverse current
I
R
=
ƒ
(
V
R
)
T
A
= Parameter
10
-6
A
10
-7
V
FC
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
A
10
-8
TA = 125°C
85°C
25°C
I
R
10
-9
10
-10
10
10
-11
0
1
2
3
V
5
I
pp
V
R
3
2011-06-17
ESD5V0SxUS
Normalized reverse voltage
V
BR
(
T
A
)/
V
BR
(25°C)=
ƒ
(
T
A
)
I
R
= 1 mA
1.06
90
pF
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
V
BR
(Ta)/V
BR
(25°C)
1.04
1.03
70
C
T
60
50
40
30
20
0
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
-50
-25
0
25
50
75
100
°C
150
T
A
1
2
3
V
5
V
R
4
2011-06-17
ESD5V0SxUS
Application example
ESD5V0S5US
5 channels, uni-directional
5 protected signal lines, level 0 ... +5.3V
Connector
I/O
I/O
I/O
I/O
I/O
ESD sensitive
device
3
2
1
4
5
6
The protection diode should be placed
very close to the location where the
ESD or other transients can occur to
keep loops and inductances as small
as possible.
Pin 5 should be connected directly to a
ground plane on the board.
Application example
ESD5V0S5US
4 channels, bi-directional
Connector
4 protected signal lines, level -5.3V ... +5.3V
I/O
I/O
I/O
I/O
ESD sensitive
device
6
5
4
For bi-directional protection pin 2
(or any other pin except pin 5)
should be connected directly to a
ground plane on the board.
Pin 5 is not connected. Total
clamping voltage is the sum of
V
CL
+ V
FC
(see table on page 2).
1
2
3
Application example
ESD5V0S4US
4 channels, uni-directional
Connector
4 protected signal lines, level 0 … +5.3V
I/O
I/O
I/O
I/O
ESD sensitive
device
3
2
1
Pin 2 and pin 5 should be
connected directly to a ground
plane on the board.
4
5
6
5
2011-06-17
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