RS2A - RS2M
Taiwan Semiconductor
2A, 50V - 1000V Surface Mount Fast Recovery Rectifiers
FEATURES
Low power loss, high efficiency
Ideal for automated placement
Glass passivated junction chip
Fast switching for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
●
●
●
●
●
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
2
50 - 1000
50
150
Single Die
UNIT
A
V
A
°C
DO-214AA (SMB)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix “H” means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
SYMBOL
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
RS2A RS2B RS2D RS2G RS2J RS2K RS2M UNIT
RS2A RS2B RS2D RS2G RS2J
50
100
200
400
600
35
70
140
280
420
50
100
200
400
600
2
50
- 55 to +150
- 55 to +150
RS2K RS2M
800
1000
560
700
800
1000
V
V
V
A
A
°C
°C
1
Version:J1701
RS2A - RS2M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-Ambient Thermal Resistance
Junction-to-lead thermal resistance
SYMBOL
R
ӨJA
R
ӨJL
LIMIT
55
18
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 2A,T
J
= 25°C
(2)
SYMBOL
V
F
I
R
C
J
TYP
-
-
-
50
MAX
1.3
5
50
-
UNIT
V
µA
µA
pF
ns
ns
Reverse current @ rated V
R
per diode
Junction capacitance
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
RS2A
RS2B
RS2D
Reverse recovery time
RS2G
RS2J
RS2K
RS2M
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
I
F
=0.5A ,I
R
=1.0A
I
RR
=0.25A
t
rr
-
-
250
500
-
150
ns
ns
ns
ns
ns
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R5
RS2x
(Note 1)
H
R4
M4
Note:
1. "x" defines voltage from 50V (RS2A) to 1000V (RS2M)
*: Optional available
G
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE P/N
EXAMPLE P/N
RS2JHR5G
PART NO.
RS2J
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:J1701
RS2A - RS2M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
2.5
AVERAGE FORWARD CURRENT (A)
100
Fig2. Typical Junction Capacitance
2
CAPACITANCE (pF)
1.5
1
0.5
RESISTIVE OR
INDUCTIVE LOAD
f=1.0MHz
Vsig=50mVp-p
0
0
25
50
75
100
125
150
10
1
10
REVERSE VOLTAGE (V)
100
LEAD TEMPERATURE (
°
C)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
10 10
Fig4. Typical Forward Characteristics
Pulse Width=300μs
1% Duty Cycle
1
UF1DLW
10
T
J
=125
°
C
T
J
=125°C
1
0.1
T
J
=25°C
(A)
Pulse width
1
0.01
T
J
=25
°
C
0.1
0
20
40
60
80
100
120
140
0.001
0.1
0.4
0.3
0.4
0.6
0.5
0.8
0.6
1
0.7
1.2
0.8
1.4
0.9
1
1.6
1.1
1.8
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:J1701
RS2A - RS2M
Taiwan Semiconductor
Fig5. Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
50
8.3ms Single Half Sine Wave
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram
4
Version:J1701
RF/Wirelessly
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