Data Sheet
RJH65T14DPQ-A0
650V - 50A - IGBT
Application: Induction Heating
Microwave Oven
Features
Optimized for current resonance application
Low collector to emitter saturation voltage
V
CE(sat)
= 1.45 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25
C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
R07DS1256EJ0110
Rev.1.10
Aug 31, 2018
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25
C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25
C
Tc = 100
C
Collector peak current
Collector to emitter diode Tc = 25
C
Forward current
Tc = 100
C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Note:
Symbol
V
CES
V
GES
I
C Note1
I
C Note1
i
C
(peak)
Note1
I
DF
I
DF
i
DF
(peak)
Note2
P
C
j-c
Note3
j-cd
Note3
Tj
Note4
Tstg
Ratings
650
30
100
50
180
40
20
100
250
0.6
1.33
175
–55 to +150
Unit
V
V
A
A
A
A
A
A
W
C/W
C/W
°C
°C
Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a
reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage
of Semiconductor Devices) and individual reliability data.
R07DS1256EJ0110 Rev.1.10
Aug 31, 2018
Page 1 of 9
RJH65T14DPQ-A0
Electrical Characteristics
(Tc = 25
C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Tail loss
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
E
tail
Min
4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
1.45
1750
69
34
80
15
35
38
30
125
115
1.3
1.2
2.5
38
30
130
135
1.45
1.45
2.90
560
Max
100
±1
7
1.75
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
J
Test Conditions
V
CE
= 650 V, V
GE
= 0 V
V
GE
= ±30 V, V
CE
= 0 V
V
CE
= 10 V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15 V
Note5
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
I
C
= 50 A
Rg = 10
T
C
= 25
C
Inductive load
V
CC
= 400 V
V
GE
= 15 V
I
C
= 50 A
Rg = 10
T
C
= 150
C
Inductive load
V
CC
= 300 V, V
GE
= 20 V
I
C
= 50 A, Rg = 15
Tc = 125
C
Current resonance circuit
I
F
= 20 A
Note5
I
F
= 20 A
di
F
dt
=
300
As
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 1.
2.
3.
4.
V
ECF
t
rr
1.2
250
1.6
V
ns
Pulse width limited by safe operating area.
PW
5
s,
duty cycle
1%
Value at Tc = 25
C
Please use this device in the thermal conditions which the junction temperature does not exceed 175
C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175
C.
5. Pulse test
R07DS1256EJ0110 Rev.1.10
Aug 31, 2018
Page 2 of 9
RJH65T14DPQ-A0
Main Characteristics
Collector Dissipation vs.
Case Temperature
300
120
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation P
C
(W)
200
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
100
80
60
40
20
0
0
25
50
75
100 125 150 175
100
0
Case Temperature Tc (C)
Case Temperature Tc (C)
Maximum Safe Operation Area
1000
120
Typical Transfer Characteristics
VCE = 10 V
Pulse Test
90
Collector Current I
C
(A)
100
10
1
0.1
0.01
1
Tc = 25
C
Single pulse Notes 6
10
=1
0
s
Collector Current I
C
(A)
PW
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
120
Pulse Test
2
Tc = 25
C
15 V
120
10 V
10
0
100
60
150
C
Tc = 25
C
30
s
1000
9.0 V
0
0
2
4
6
8
10
Gate to Emitter Voltage V
GE
(V)
Typical Output Characteristics
Pulse Test
2
Tc = 150
C
15 V
10 V
Collector Current I
C
(A)
90
Collector Current I
C
(A)
9.0 V
90
60
8.0 V
30
VGE = 7.0 V
0
0
1
2
3
4
5
60
8.0 V
30
VGE = 7.0 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Notes: 6. This data is the designed value on Renesas’s measurement condition, Renesas recommends that operating
conditions are designed according to a document “Power MOSFET/IGBT Attention of Handling
Semiconductor Devices (R07ZZ0010)”.
R07DS1256EJ0110 Rev.1.10
Aug 31, 2018
Page 3 of 9
RJH65T14DPQ-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
C
Pulse Test
IC = 100 A
50 A
25 A
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
IC = 100 A
50 A
25 A
Tc = 150
C
Pulse Test
4
3
2
1
0
4
3
2
1
0
4
8
12
16
20
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
8
IC = 10 mA
6
4
2
0
25
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temperature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3.0
2.5
2.0
1.5
25 A
1.0
0.5
0
25
VGE = 15 V
Pulse Test
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
IC = 100 A
50 A
1.0 mA
VCE = 10 V
Pulse Test
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
R07DS1256EJ0110 Rev.1.10
Aug 31, 2018
Page 4 of 9
RJH65T14DPQ-A0
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
Switching Energy Losses E (mJ)
1000
10
Switching Times t (ns)
tf
100
td(off)
td(on)
tr
VCC = 400 V, VGE = 15 V
Rg = 10
,
Tc = 150
C
1
Eoff
Eon
10
1
10
VCC = 400 V, VGE = 15 V
Rg = 10
,
Tc = 150
C
100
0.1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
VCC = 400 V, VGE = 15 V
IC = 50 A, Tc = 150
C
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
Switching Energy Losses E (mJ)
1000
10
VCC = 400 V, VGE = 15 V
IC = 50 A, Tc = 150
C
Switching Times t (ns)
tf
100
td(off)
td(on)
tr
10
Eon
Eoff
1
1
10
100
1
10
100
Gate Registance R
g
()
(Inductive load)
Switching Characteristics (Typical) (5)
VCC = 400 V, VGE = 15 V
IC = 50 A, Rg = 10
td(off)
100
tf
td(on)
tr
10
Gate Registance R
g
()
(Inductive load)
Switching Characteristics (Typical) (6)
Switching Energy Losses E (mJ)
1000
10
Switching Times t (ns)
VCC = 400 V, VGE = 15 V
IC = 50 A, Rg = 10
Eon
1
25
Eoff
50
75
100
125
150
1
25
50
75
100
125
150
Case Temperature Tc (C)
(Inductive load)
Case Temperature Tc (C)
(Inductive load)
R07DS1256EJ0110 Rev.1.10
Aug 31, 2018
Page 5 of 9
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